hyb18t512160af-5 Infineon Technologies Corporation, hyb18t512160af-5 Datasheet - Page 83

• Manufacturer Part Number: hyb18t512160af-5
• Description: 512-mbit Ddr2 Sdram
• Manufacturer: Infineon Technologies Corporation

Figure 66
Table 35
Voltage (V)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
1) The driver characteristics evaluation conditions are Minimum 95 °C (
2) The driver characteristics evaluation conditions are Nominal Default 25 °C (
3) The driver characteristics evaluation conditions are Maximum 0 °C (
Data Sheet
Full Strength Default Pull-up Driver Diagram
Full Strength Default Pull–down Driver Characteristics
Pull-down Driver Current [mA]
Min.
0.00
4.30
8.60
12.90
16.90
20.05
22.10
23.27
24.10
24.73
25.23
25.65
26.02
26.35
26.65
26.93
27.20
27.46
—
—
1)
Nominal Default low
0.00
5.65
11.30
16.50
21.20
25.00
28.30
30.90
33.00
34.50
35.50
36.10
36.60
36.90
37.10
37.40
37.60
37.70
37.90
—
83
2)
Nominal Default high
0.00
5.90
11.80
16.80
22.10
27.60
32.40
36.90
40.90
44.60
47.70
50.40
52.60
54.20
55.90
57.10
58.40
59.60
60.90
—
HYB18T512[40/80/16]0AF–[3/3S/3.7/5]
T
T
CASE
CASE
).
),
T
V
V
CASE
DDQ
DDQ
),
= 1.9 V, fast-fast process
= 1.7 V, slow-slow process
V
AC & DC Operating Conditions
DDQ
512-Mbit DDR2 SDRAM
= 1.8 V, typical process
2)
Max.
0.00
7.95
15.90
23.85
31.80
39.75
47.70
55.05
62.95
69.55
75.35
80.35
84.55
87.95
90.70
93.00
95.05
97.05
99.05
101.05
09112003-SDM9-IQ3P
3)
Rev. 1.3, 2005-01