hyb18t512160af-5 Infineon Technologies Corporation, hyb18t512160af-5 Datasheet - Page 20

• Manufacturer Part Number: hyb18t512160af-5
• Description: 512-mbit Ddr2 Sdram
• Manufacturer: Infineon Technologies Corporation

2.1
Figure 1
Note:
1.
Data Sheet
V
DLL.They are isolated on the device from
V
DDL
DDQ
,
and
V
SS
TFBGA Ball Out Diagrams
Pin Configuration for ×4 components, P-TFBGA-60 (top view)
V
, and
SSDL
V
are power and ground for the
SSQ
$
$
$
$
$
$
$
$
$
$
$
V
DD
,
20
2. Ball position L8 is A13 for 512-Mbit and is Not
Connected on 256-Mbit
HYB18T512[40/80/16]0AF–[3/3S/3.7/5]
Pin Configuration and Block Diagrams
$
$
$
$
$
512-Mbit DDR2 SDRAM
$
$
$
$
$
09112003-SDM9-IQ3P
Rev. 1.3, 2005-01