hyb18t512160af-5 Infineon Technologies Corporation, hyb18t512160af-5 Datasheet - Page 113

hyb18t512160af-5

Manufacturer Part Number

hyb18t512160af-5

Description

512-mbit Ddr2 Sdram

Manufacturer

Infineon Technologies Corporation

Datasheet

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Table 61

2.0 +188 +188 +167 +146 +125 +63 —

1.5 +146 +167 +125 +125 +83

1.0 +63

0.9 —

0.8 —

0.7 —

0.6 —

0.5 —

0.4 —

1) All units in ps.

2) For all input signals

Data Sheet

DQS, DQS Single-ended Slew Rate

2.0 V/ns

∆

DS1

∆

+125 +42

—

DH1

Derating Values for Data Setup and Hold Time of Single-ended DQS (DDR2-400 & -533)

1.5 V/ns

+31

∆

—

DS1

∆

+83

+69

—

(total) =

DH1

1.0 V/ns

∆

-11

-25

—

DS1

(base) + ∆

∆

+42 +81 +43 —

-14 -13 -13 -18 -27 -29

-31 -27 -30 -32 -44 -43

—

DH1

1)2)

0.9 V/ns 0.8 V/ns 0.7 V/ns

∆

-2

-45 -53 -50 -67 -61

—

DS1

∆

—

and

DH1

∆

—

-7

-74 -96 -85

—

113

DS1

(total) =

∆

—

-13 —

—

DH1

HYB18T512[40/80/16]0AF–[3/3S/3.7/5]

DH1

∆

—

-128 -156 -145 -180 -175 -223 -226 -288

—

DS1

(base) + ∆

∆

—

-45

-62

-85

-114 -102 -138 -132 -181 -183 -246

—

DH1

AC Timing Measurement Conditions

0.6 V/ns

∆

—

-60

-78

-210 -243 -240 -286 -291 -351

DH1

DS1

512-Mbit DDR2 SDRAM

∆

—

–86 —

-109 -108 -152 —

DH1

0.5 V/ns

∆

—

09112003-SDM9-IQ3P

DS1

Rev. 1.3, 2005-01

∆

—

DH1

0.4 V/ns

∆

—

DS1

∆

—

DH1

hyb18t512160af-5 Infineon Technologies Corporation, hyb18t512160af-5 Datasheet - Page 113

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