hyb18t512160bf-5 Infineon Technologies Corporation, hyb18t512160bf-5 Datasheet - Page 26

• Manufacturer Part Number: hyb18t512160bf-5
• Description: 240-pin Unbuffered Ddr2 Sdram Modules
• Manufacturer: Infineon Technologies Corporation

3
3.1
Table 15
Parameter
Voltage on any pins relative to
Voltage on
Voltage on
Storage Humidity (without condensation)
1) Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only, and device
3.2
Table 16
Parameter
Operating temperature (ambient)
DRAM Case Temperature
Storage Temperature
Barometric Pressure (operating & storage)
Operating Humidity (relative)
1) DRAM Component Case Temperature is the surface temperature in the center on the top side of any of the DRAMs.
2) Within the DRAM Component Case Temperature Range all DRAM specifications will be supported
3) Above 85 °C DRAM Case Temperature the Auto-Refresh command interval has to be reduced to
4) Self-Refresh period is hard-coded in the DRAMs and therefore it is imperative that the system ensures the DRAM is below
5) Up to 3000 m.
Data Sheet
functional operation at or above the conditions indicated is not implied. Exposure to absolute maximum rating conditions
for extended periods may affect reliability.
85 °C Case Temperature before initiating Self-Refresh operation.
V
V
Electrical Characteristics
Absolute Maximum Ratings
Absolute Maximum Ratings
DC Operating Conditions
Operating Conditions
DD
DDQ
relative to
relative to
V
V
SS
SS
V
SS
Symbol
V
V
V
H
IN
DD
DDQ
STG
,
V
OUT
Symbol
T
T
T
H
PBar
OPR
CASE
STG
OPR
26
Values
Min.
– 0.5
– 1.0
– 0.5
5
HYS[64/72]T[16/32/64]0xxHU-[2.5/.../5]-A
Values
Min.
0
0
– 50
+69
10
Unbuffered DDR2 SDRAM Modules
Max.
2.3
2.3
2.3
95
Max.
+65
+95
+100
+105
90
Unit
V
V
V
%
Electrical Characteristics
02182004-DHQB-4RRW
Unit
°C
°C
°C
%
kPa
t
REFI
Note/Test
Condition
1)
1)
1)
1)
Rev. 1.3, 2005-09
= 3.9 µs
Notes
1)2)3)4)
5)