lh28f800bje-pttlz1 Sharp Microelectronics of the Americas, lh28f800bje-pttlz1 Datasheet - Page 43

• Manufacturer Part Number: lh28f800bje-pttlz1
• Manufacturer: Sharp Microelectronics of the Americas

6.2.8 Block Erase, Full Chip Erase, Word/Byte Write and Lock-Bit Configuration Performance
NOTES:
1. Typical values measured at T
2. Excludes system-level overhead.
3. Sampled but not 100% tested.
4. A latency time is required from issuing suspend command(WE# or CE# going high) until RY/BY# going High Z or SR.7
5. If the time between writing the Block Erase Resume command and writing the Block Erase Suspend command is shorter
t
t
t
t
t
t
t
t
t
t
t
t
t
WHQV1
EHQV1
WHQV2
EHQV2
WHQV3
EHQV3
WHQV4
EHQV4
WHRZ1
EHRZ1
WHRZ2
EHRZ2
ERES
Sym.
set. Subject to change based on device characterization.
going "1".
than t
completion of the operation.
ERES
Word Write Time
Byte Write Time
Block Write Time
(In word mode)
Block Write Time
(In byte mode)
Block Erase Time
Full Chip Erase Time
Set Lock-Bit Time
Clear Block Lock-Bits Time
Word/Byte Write Suspend Latency Time to
Read
Block Erase Suspend Latency Time to
Read
Latency Time from Block Erase Resume
Command to Block Erase Suspend
Command
and both commands are written repeatedly, a longer time is required than standard block erase until the
Parameter
A
=+25°C and V
32K word Block
4K word Block
64K byte Block
8K byte Block
32K word Block
4K word Block
64K byte Block
8K byte Block
32K word Block
64K byte Block
4K word Block
8K byte Block
V
CC
CC
=3.1V-3.5V, T
=3.0V, V
Notes
2
2
2
2
2
2
2
2
2
2
2
2
2
4
4
5
CCW
A
=3.0V or 12.0V. Assumes corresponding lock-bits are not
=0°C to +70°C
Min.
600
V
CCW
Typ.
=3.1V-3.5V
0.15
22.8
1.1
2.2
0.3
1.2
0.6
33
36
31
32
56
16
1
6
(1)
Max.
200
200
200
200
114
200
0.5
15
30
4
7
1
6
5
5
Min.
600
V
CCW
=11.7V-12.3V
Typ.
0.66
0.12
0.25
17.5
0.69
1.4
0.9
0.5
20
27
19
26
42
16
6
(1)
Max.
15
30
(3)
Rev. 1.27
Unit
µs
µs
µs
µs
µs
µs
µs
µs
s
s
s
s
s
s
s
s