lmv358amu8x-nl Fairchild Semiconductor, lmv358amu8x-nl Datasheet - Page 4

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lmv358amu8x-nl

Manufacturer Part Number
lmv358amu8x-nl
Description
General Purpose, Low Cost, Rro Amplifier
Manufacturer
Fairchild Semiconductor
Datasheet
DATA SHEET
Electrical Specifications
(T
Min/max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Outgoing quality levels are
determined from tested parameters.
Notes:
1. Guaranteed by testing or statistical analysis at +25°C.
2. +IN and -IN are gates to CMOS transistors with typical input bias current of <1nA. CMOS leakage is too small to practically measure.
Package Thermal Resistance
4
Parameter
AC Performance
Gain Bandwidth Product
Phase Margin
Gain Margin
Slew Rate
Input Voltage Noise
Crosstalk: LMV358
DC Performance
Input Offset Voltage
Average Drift
Input Bias Current
Input Offset Current
Power Supply Rejection Ratio
Open Loop Gain
Supply Current (Per Channel)
Input Characteristics
Input Common Mode Voltage Range
Common Mode Rejection Ratio
Output Characteristics
Output Voltage Swing
Short Circuit Output Current
Package
5 lead SC70
5 lead SOT23
8 lead SOIC
8 lead MSOP
14 lead TSSOP
14 lead SOIC
c
= 25°C, V
LMV324
s
= +5V, G = 2, R
1
2
1
2
1
L
1
1
= 10k
1
1
Conditions
C
>50kHz
100kHz
100kHz
DC
LO
HI
R
R
R
sourcing; V
sinking; V
L
L
L
L
to V
= 50pF, R
= 2k
= 10k
= 10k
s
/2, R
o
to V
o
to V
to V
= 5V
L
f
= 0V
= 10k , V
= 2k to V
s
/2; LO/HI
s
s
/2; LO
/2; HI
1
1
o (DC)
s
/2
= V
Min.
0.1
50
50
50
10
0
5
cc
/2; unless otherwise noted)
0.036 to 4.95
0.013
4.98
Typ.
100
-0.4
+34
1.4
3.8
-23
1.5
<1
<1
73
12
33
91
80
65
70
75
1
6
LMV321/LMV358/LMV324
331.4°C/W
256°C/W
152°C/W
206°C/W
100°C/W
Max.
88°C/W
150
3.6
4.9
7
JA
REV. 1A April 2004
nV/ Hz
MHz
V/ s
Unit
deg
mV
V/°C
mA
mA
dB
dB
dB
nA
nA
dB
dB
dB
V
V
V
V
V
A

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