isd-t360sb ETC-unknow, isd-t360sb Datasheet - Page 24

• Manufacturer Part Number: isd-t360sb
• Manufacturer: ETC-unknow

ISD-T360SB
1.3
1.3.1
1.3.2
1-16
C
I
I
I
I
I
t
t
t
t
V
V
V
V
Storage temperature
Temperature under bias
All input and output voltages
with respect to GND
Symbol
CC1
CC2
CC3
L
O
WRa
WRCSh
WRh
WRia
ENVh
Hh
Hl
Hys
X
(Off)
T
A
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
= 0ºC to +70ºC, V
Output Leakage Current (I/O
X1 and X2 Capacitance
Active Supply Current
Standby supply current
Power-down Mode Supply
Current
Input Load Current
pins in Input Mode)
WR0 Active
WR0 Hold after EMCS
WR0 Hold
WR0 Inactive
ENV0 Input, High Voltage
CMOS Input with Hysteresis,
Logical 1 Input Voltage
CMOS Input with Hysteresis,
Logical 0 Input Voltage
Hysteresis Loop Width
Parameter
CC
(All Parameters with Reference to V
4
1
–65°C to +150°C
0°C to +70°C
–0.5 V to +6.5 V
= 5 V ±10% Or 3.3 V ±10%, GND = 0 V
1
Table 1-8: Electrical Characteristics
Normal Operation Mode,
Running Speech
Applications
Normal Operation Mode,
DSPM Idle
Power-down Mode
0 V £ V
0 V £ V
After R.E. CTTL, T1
R.E. EMCS R.E. to R.E. WR0
After R.E. CTTL
After R.E. CTTL, T3
IN
OUT
Conditions
£ V
2
£ V
CC
2
CC
NOTE
2,3
Absolute maximum ratings indicate limits
beyond which permanent damage may
occur. Continuous operation at these limits
is not intended; operation should be limited
to the conditions specified below.
CC
t
CTp
= 3.3 V)
/2 – 6
–5.0
–5.0
Min
7.5
2.0
2.1
0.5
7
7
17.0
40.0
30.0
Typ
Voice Solutions in Silicon
2 + 2
2 + 2
1—HARDWARE
Max
80.0
12.0
t
t
CTp
CTp
5.0
5.0
0.8
/
/
Units
mA
mA
mA
mA
mA
pF
V
V
V
V
™