mc68hc912bc32 Freescale Semiconductor, Inc, mc68hc912bc32 Datasheet - Page 96

• Manufacturer Part Number: mc68hc912bc32
• Description: M68hc12 Microcontrollers
• Manufacturer: Freescale Semiconductor, Inc

EEPROM
MARG — Program and Erase Voltage Margin Test Enable Bit
EECPD — Charge Pump Disable Bit
EECPRD — Charge Pump Ramp Disable Bit
EECPM — Charge Pump Monitor Enable Bit
7.3.4 EEPROM Control Register
BULKP — Bulk Erase Protection Bit
BYTE — Byte and Aligned Word Erase Bit
ROW — Row or Bulk Erase Bit (when BYTE = 0)
96
This bit is used to evaluate the program/erase voltage margin.
Known to enhance write/erase endurance of EEPROM cells.
Read anytime. Write anytime if EEPGM = 0 and PROTLCK = 0.
Read anytime. Write anytime if EEPGM = 0.
Read anytime. Write anytime if EEPGM = 0.
BYTE and ROW have no effect when ERASE = 0.
0 = Normal operation
1 = Program and erase margin test
0 = Charge pump is turned on during program/erase.
1 = Disable charge pump.
0 = Charge pump is turned on progressively during program/erase.
1 = Disable charge pump controlled ramp up.
0 = Normal operation
1 = Output the charge pump voltage on the IRQ/V
0 = EEPROM can be bulk erased.
1 = EEPROM is protected from being bulk or row erased.
0 = Bulk or row erase is enabled.
1 = One byte or one aligned word erase only
0 = Erase entire EEPROM array.
1 = Erase only one 32-byte row.
Address: $00F3
Reset:
Read:
Write:
BYTE
0
0
1
1
BULKP
Bit 7
1
Figure 7-5. EEPROM Control Register (EEPROG)
6
0
0
ROW
M68HC12B Family Data Sheet, Rev. 9.1
0
1
0
1
Table 7-2. Erase Selection
5
0
0
BYTE
4
0
Bulk erase entire EEPROM array
PP
Byte or aligned word erase
Byte or aligned word erase
ROW
pin.
Row erase 32 bytes
3
0
Block Size
ERASE
2
0
EELAT
1
0
Freescale Semiconductor
EEPGM
Bit 0
0