mc68hc908lj24 Freescale Semiconductor, Inc, mc68hc908lj24 Datasheet - Page 74

• Manufacturer Part Number: mc68hc908lj24
• Description: M68hc08 Microcontrollers
• Manufacturer: Freescale Semiconductor, Inc

FLASH Memory (FLASH)
4.7 FLASH Program Operation
Data Sheet
74
NOTE:
NOTE:
Programming of the FLASH memory is done on a row basis. A row
consists of 64 consecutive bytes starting from addresses $xx00, $xx40,
$xx80, or $xxC0. Use the following procedure to program a row of
FLASH memory.
algorithm.)
This program sequence is repeated throughout the memory until all data
is programmed.
The time between each FLASH address change (step 7 to step 7), or the
time between the last FLASH addressed programmed to clearing the
PGM bit (step 7 to step 10), must not exceed the maximum programming
time, t
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order shown, other unrelated operations may
occur between the steps.
10. Clear the PGM bit.
11. Wait for time, t
12. Clear the HVEN bit.
13. After time, t
1. Set the PGM bit. This configures the memory for program
2. Read the FLASH block protect register.
3. Write any data to any FLASH address within the row address
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Write data to the FLASH address to be programmed.
8. Wait for time, t
9. Repeat steps 7 and 8 until all bytes within the row are programmed.
operation and enables the latching of address and data for
programming.
range desired.
again.
prog
max.
FLASH Memory (FLASH)
(Figure 4-3
rcv
prog
nvh
(1µs), the memory can be accessed in read mode
nvs
pgs
(5µs).
(30µs).
(10µs).
(5µs).
shows a flowchart of the programming
MC68HC908LJ24/LK24 — Rev. 2.1
Freescale Semiconductor