mc68hc908qz16 Freescale Semiconductor, Inc, mc68hc908qz16 Datasheet - Page 42

• Manufacturer Part Number: mc68hc908qz16
• Description: M68hc08 Microcontrollers
• Manufacturer: Freescale Semiconductor, Inc

Memory
This program sequence is repeated throughout the memory until all data is programmed.
42
10. Clear the PGM bit.
11. Wait for a time, t
12. Clear the HVEN bit.
13. After time, t
Programming and erasing of FLASH locations can not be performed by
code being executed from the same FLASH array.
While these operations must be performed in the order shown, other
unrelated operations may occur between the steps. Care must be taken
within the FLASH array memory space such as the COP control register
(COPCTL) at $FFFF.
It is highly recommended that interrupts be disabled during program/ erase
operations.
Do not exceed t
cumulative high voltage programming time to the same row before next
erase. t
Refer to
The time between programming the FLASH address change (step 7 to step
7), or the time between the last FLASH programmed to clearing the PGM
bit (step 7 to step 10) must not exceed the maximum programming time,
t
Be cautious when programming the FLASH array to ensure that
non-FLASH locations are not used as the address that is written to when
selecting either the desired row address range in step 3 of the algorithm or
the byte to be programmed in step 7 of the algorithm. This applies
particularly to $FFD4–$FFDF.
PROG
RCV
maximum.
HV
(typical 1 μs), the memory can be accessed in read mode again.
NVH
21.15 Memory
(1)
must satisfy this condition:
t
(minimum 5 μs).
NVS
MC68HC908GZ16 • MC68HC908GZ8 Data Sheet, Rev. 4
PROG
+ t
NVH
maximum or t
Characteristics.
+ t
PGS
+ (t
CAUTION
NOTE
NOTE
NOTE
NOTE
NOTE
PROG
HV
maximum. t
x 32)
≤
t
HV
HV
maximum
is defined as the
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