mt46v128m8p-6t Micron Semiconductor Products, mt46v128m8p-6t Datasheet - Page 66

• Manufacturer Part Number: mt46v128m8p-6t
• Description: 1gb Ddr Sdram Component
• Manufacturer: Micron Semiconductor Products

Figure 37:
PDF: 09005aef80a2f898/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 1Gb DDR: Rev. I, Core DDR: Rev. B 12/07 EN
Consecutive WRITE-to-WRITE
Notes:
t DQSS (NOM)
Command
Address
1. DI b (or n) = data-in from column b (or column n).
2. Three subsequent elements of data-in are applied in the programmed order following DI b.
3. Three subsequent elements of data-in are applied in the programmed order following DI n.
4. An uninterrupted burst of 4 is shown.
5. Each WRITE command may be to any bank.
DQS
CK#
DM
DQ
CK
WRITE
Bank,
Col b
T0
t DQSS
NOP
DI
T1
b
66
T1n
WRITE
Bank,
Col n
T2
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T2n
NOP
1Gb: x4, x8, x16 DDR SDRAM
T3
DI
n
T3n
Transitioning Data
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NOP
T4
T4n
Operations
NOP
T5
Don’t Care