mt48lc16m16a2 Micron Semiconductor Products, mt48lc16m16a2 Datasheet - Page 46
mt48lc16m16a2
Manufacturer Part Number
mt48lc16m16a2
Description
256mb X4, X8, X16 Sdram
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT48LC16M16A2.pdf
(62 pages)
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TIMING PARAMETERS
NOTE: 1. For this example, the burst length = 4, and the CAS latency = 2.
256Mb: x4, x8, x16 SDRAM
256MSDRAM_E.p65 – Rev. E; Pub. 3/02
A0-A9, A11, A12
*CAS latency indicated in parentheses.
DQML, DQMU
SYMBOL*
t
t
t
t
t
t
t
t
t
t
AC (3)
AC (2)
AH
AS
CH
CL
CK (3)
CK (2)
CKH
CKS
COMMAND
BA0, BA1
DQM/
2. x16: A9, A11, and A12 = “Don’t Care”
CKE
A10
CLK
DQ
x8: A11 and A12 = “Don’t Care”
x4: A12 = “Don’t Care”
t CKS
t CMS
MIN
0.8
1.5
2.5
2.5
7.5
0.8
1.5
t AS
t AS
t AS
7
ACTIVE
T0
ROW
ROW
BANK
t CMH
t CKH
-7E
t AH
t AH
t AH
t RCD
t RAS
t RC
MAX
5.4
5.4
t CK
T1
NOP
MIN
0.8
1.5
2.5
2.5
7.5
0.8
1.5
10
ENABLE AUTO PRECHARGE
t CMS
t CL
COLUMN m 2
-75
READ – WITH AUTO PRECHARGE
BANK
T2
READ
t CMH
MAX
t CH
5.4
6
CAS Latency
UNITS
T3
NOP
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t LZ
t AC
46
T4
NOP
D
OUT
t OH
t AC
SYMBOL*
t
t
t
t
t
t
t
t
t
t
m
CMH
CMS
HZ (3)
HZ (2)
LZ
OH
RAS
RC
RCD
RP
D
T5
OUT
Micron Technology, Inc., reserves the right to change products or specifications without notice.
NOP
m + 1
t OH
MIN
t AC
0.8
1.5
37
60
15
15
1
3
-7E
1
D
120,000
T6
OUT
MAX
256Mb: x4, x8, x16
NOP
5.4
5.4
m + 2
t OH
t AC
t RP
MIN
D
0.8
1.5
44
66
20
20
T7
OUT
NOP
1
3
m + 3
t OH
t HZ
-75
120,000
©2002, Micron Technology, Inc.
MAX
SDRAM
5.4
6
T8
BANK
ACTIVE
ROW
ROW
DON’T CARE
UNDEFINED
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns