mt48lc16m16a2 Micron Semiconductor Products, mt48lc16m16a2 Datasheet - Page 13
mt48lc16m16a2
Manufacturer Part Number
mt48lc16m16a2
Description
256mb X4, X8, X16 Sdram
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT48LC16M16A2.pdf
(62 pages)
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Burst Type
to be either sequential or interleaved; this is referred to
as the burst type and is selected via bit M3.
mined by the burst length, the burst type and the start-
ing column address, as shown in Table 1.
M12, M11, M10 = “0, 0, 0”
256Mb: x4, x8, x16 SDRAM
256MSDRAM_E.p65 – Rev. E; Pub. 3/02
to ensure compatibility
with future devices.
*Should program
Accesses within a given burst may be programmed
The ordering of accesses within a burst is deter-
12
A12
Reserved*
11
A11
Mode Register Definition
10
A10
WB
M9
0
1
9
A9
Op Mode
8
A8
7
A7
Programmed Burst Length
M8
Figure 1
0
Single Location Access
-
CAS Latency
6
Write Burst Mode
A6
5
M7
A5
0
-
4
A4
M3
BT
M6-M0
Defined
0
1
3
A3
-
M2
M6
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
Burst Length
2
M1
A2
M5
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
M0
M4
1
Operating Mode
Standard Operation
All other states reserved
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
A1
0
A0
Reserved
Reserved
Reserved
Full Page
M3 = 0
Burst Type
Interleaved
Sequential
1
2
4
8
Mode Register (Mx)
Burst Length
Address Bus
CAS Latency
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
2
3
Reserved
Reserved
Reserved
Reserved
M3 = 1
1
2
4
8
13
NOTE: 1. For full-page accesses: y = 2,048 (x4); y = 1,024
Length
Burst
Page
Full
(y)
2
4
8
2. For a burst length of two, A1-A9, A11 (x4); A1-A9
3. For a burst length of four, A2-A9, A11 (x4); A2-A9
4. For a burst length of eight, A3-A9, A11 (x4); A3-A9
5. For a full-page burst, the full row is selected and
6. Whenever a boundary of the block is reached
7. For a burst length of one, A0-A9, A11 (x4); A0-A9
Starting Column
(x8); y = 512 (x16).
(x8); or A1-A8 (x16) select the block-of-two burst;
A0 selects the starting column within the block.
(x8); or A2-A8 (x16) select the block-of-four burst;
A0-A1 select the starting column within the block.
(x8); or A3-A8 (x16) select the block-of-eight burst;
A0-A2 select the starting column within the block.
A0-A9, A11 (x4); A0-A9 (x8); or A0-A8 (x16) select
the starting column.
within a given sequence above, the following
access wraps within the block.
(x8); or A0-A8 (x16) select the unique column to be
accessed, and mode register bit M3 is ignored.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
n = A0-A11/9/8
A2 A1 A0
(location 0-y)
0
0
0
0
1
1
1
1
Address
A1 A0
0
0
1
1
0
0
1
1
0
0
1
1
Burst Definition
A0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
256Mb: x4, x8, x16
Table 1
Type = Sequential Type = Interleaved
Cn, Cn + 1, Cn + 2
0-1-2-3-4-5-6-7
1-2-3-4-5-6-7-0
2-3-4-5-6-7-0-1
3-4-5-6-7-0-1-2
4-5-6-7-0-1-2-3
5-6-7-0-1-2-3-4
6-7-0-1-2-3-4-5
7-0-1-2-3-4-5-6
Cn + 3, Cn + 4...
Order of Accesses Within a Burst
…Cn - 1,
0-1-2-3
1-2-3-0
2-3-0-1
3-0-1-2
Cn…
0-1
1-0
©2002, Micron Technology, Inc.
Not Supported
0-1-2-3-4-5-6-7
1-0-3-2-5-4-7-6
2-3-0-1-6-7-4-5
3-2-1-0-7-6-5-4
4-5-6-7-0-1-2-3
5-4-7-6-1-0-3-2
6-7-4-5-2-3-0-1
7-6-5-4-3-2-1-0
SDRAM
0-1-2-3
1-0-3-2
2-3-0-1
3-2-1-0
0-1
1-0