st52f513 STMicroelectronics, st52f513 Datasheet - Page 115

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st52f513

Manufacturer Part Number
st52f513
Description
8-bit Microcontrollers
Manufacturer
STMicroelectronics
Datasheet

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16.7 Memory Characteristics
Operating Conditions: V
Table 16.10 RAM and Registers
Table 16.11 Flash Program/Data Memory
Table 16.12 EEPROM Data Memory
Notes:
1. Minimum V
2. Flash/EEPROM can be programmed at single byte or at 32 bytes blocks. In working mode (In Applica-
3. The data retention time increases when the T
4. Not tested in production, guaranteed by design.
Symbol
Symbol
Symbol
Below the specified threshold the device is turned off and it is turned on only after the V
the POR threshold, as consequence the device is reset by the POR and the RAM is put to all 0. Guar-
anteed by design, not tested in production.
tion Programming) the time includes the erase operation before the writing.
N
t
t
V
N
t
t
prog
RET
prog
RET
RW
RM
RW
Programming time for 1/32 bytes
Programming time for 1/32 bytes
Programming time for 8 Kbytes
Data retention
Write/erase cycles
Data retention mode
Programming time for 1/32 bytes
Data retention
Write/erase cycles
DD
supply voltage that avoids the loosing of data stored into RAM or into hardware registers.
Parameter
Parameter
Parameter
DD
3)
3)
=2.8 V to 5.5 V, TA=-40 to 85 C, unless otherwise specified.
1)
2)
2)
2)
Fast Programming Mode
V
V
V
A
DD
DD
DD
decreases.
Not Virgin Flash
PLVD disabled
Conditions
Conditions
Virgin Flash
Conditions
= 2.8 V - 5.5 V
= 2.8 V - 5.5 V
= 2.8 V - 5.5 V
T
T
T
T
T
IAP mode
ISP mode
ISP mode
A
A
A
A
A
=55 C
=25 C
=25 C
=55 C
=25 C
Min.
Min.
Min.
10
10
ST52510xx ST52513xx
300000
300000
V
Typ.
Typ.
Typ.
640
DDmin
2.5
5
5
DD
Max
Max
Max
goes above
115/136
years
years
cycle
cycle
Unit
Unit
Unit
ms
ms
V

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