pn200a-j18z Fairchild Semiconductor, pn200a-j18z Datasheet - Page 2

• Manufacturer Part Number: pn200a-j18z
• Description: Pn200 / Mmbt200 / Pn200a / Mmbt200a Pnp General Purpose Amplifier
• Manufacturer: Fairchild Semiconductor

OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
BV
BV
BV
I
I
I
h
V
V
f
C
NF
Symbol
CBO
CES
EBO
T
FE
CE(
BE(
obo
Typical Characteristics
Electrical Characteristics
*
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
CBO
CEO
EBO
Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
sat
sat
500
400
300
200
100
)
)
0
0.01
- 40 °C
125 °C
Typical Pulsed Current Gain
25 °C
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage*
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain - Bandwidth Product
Output Capacitance
Noise Figure
vs Collector Current
I - COLLECTOR CURRENT (mA)
0.1
C
Parameter
1
10
TA = 25°C unless otherwise noted
V
CE
100
= 5V
I
I
I
V
V
V
I
I
I
I
I
I
I
I
V
V
I
R
C
C
E
C
C
C
C
C
C
C
C
C
CB
CE
EB
CE
CB
G
= 10 A, I
= 1.0 mA, I
= 10 A, I
= 100 A, V
= 10 mA, V
= 100 mA, V
= 150 mA, V
= 10 mA, I
= 200 mA, I
= 10 mA, I
= 200 mA, I
= 100 A, V
= 2.0 k , f = 1.0 kHz
= 50 V, I
= 40 V, I
= 4.0 V, I
= 10 V, f = 1.0 MHz
= 20 V, I
Test Conditions
B
C
E
E
0.25
0.15
0.05
E
C
B
B
C
= 0
= 0
0.3
0.2
0.1
= 0
= 10
CE
B
B
= 0
= 0
CE
CE
= 1.0 mA
= 1.0 mA
= 20 mA
0
CE
CE
PNP General Purpose Amplifier
0.1
= 20 mA*
= 20 mA*
= 1.0 V
= 1.0 V
= 5.0 V,
= 1.0 V*
= 5.0 V*
Voltage vs Collect or Current
Collector-Emitter Saturation
= 10
I - COLLECTOR CURRE NT (mA)
C
200
200A
200
200A
200A
200
200A
1
125
°
C
Min
240
100
300
100
100
100
250
6.0
60
45
80
10
25
°
C
Max
0.85
450
600
350
0.2
0.4
1.0
6.0
4.0
50
50
50
- 40
°
100
C
(continued)
Units
MHz
nA
nA
nA
300
pF
dB
dB
V
V
V
V
V
V
V