si4800-02 NXP Semiconductors, si4800-02 Datasheet - Page 8

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si4800-02

Manufacturer Part Number
si4800-02
Description
Si4800 N-channel Trenchmos Tm Logic Level Fet
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
9397 750 12899
Product data
Fig 12. Source (diode forward) current as a function of
T
(A)
I S
j
= 25 C and 150 C; V
8
6
4
2
0
source-drain (diode forward) voltage; typical
values.
0.2
0.4
T j = 150 C
GS
0.6
= 0 V
0.8
25 C
V SD (V)
003aaa329
Rev. 02 — 17 February 2004
1
Fig 13. Gate-source voltage as a function of gate
I
V GS
D
(V)
= 8 A; V
5
4
3
2
1
0
charge; typical values.
0
N-channel TrenchMOS™ logic level FET
DD
= 15 V
5
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
10
Q G (nC)
003aaa625
SI4800
15
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