sud50n03-10p Vishay, sud50n03-10p Datasheet - Page 2

• Manufacturer Part Number: sud50n03-10p
• Description: N-ch 30-v D-s , 175c, Mosfet Pwm Optimized
• Manufacturer: Vishay

SUD50N03-10P
Siliconix
Notes:
A.
B.
C.
2
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Z
Zero Gate Voltage Drain Current
On-State Drain Current
D i S
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Continuous Current
Pulsed Current
Forward Voltage
Reverse Recovery Time
Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
Independent of operating temperature.
G
C
C
V l
O S
B
C
D i C
C
C
C
C
B
R
B
i
S-59916—Rev. A , 28-Sep-98
300 s, duty cycle
B
B
B
V
V
r
r
(BR)DSS
I
DS(on)
DS(on)
t
t
I
I
I
C
GS(th)
D(on)
C
V
C
Q
Q
d(on)
d(off)
GSS
DSS
I
Q
g
SM
I
t
oss
t
t
SD
iss
rss
rr
gd
S
fs
gs
r
f
g
2%.
Siliconix was formerly a division of TEMIC Semiconductors
I
V
V
V
V
D
V
V
V
V
DS
DS
GS
GS
DS
GS
= 24 V, V
= 24 V, V
I
= 10 V, I
= 10 V, I
50 A, V
V
V
= 15 V, V
F
Phone [phone]
= 0 V, V
V
V
V
V
V
V
V
DS
DS
15 V V
= 50 A, di/dt = 100 A/ s
DS
DS
DD
DD
I
GS
GS
0 V V
GS
DS
F
= V
= 50 A, V
= 0 V, V
= 24 V, V
= 5 V, V
= 15 V, R
= 0 V, I
= 4.5 V, I
= 10 V, I
= 15 V, I
GEN
D
D
GS
DS
GS
GS
GS
= 15 A, T
= 15 A, T
, I
= 25 V, f = 1 MHz
= 10 V, R
,
= 0 V, T
= 0 V, T
= 10 V, I
DS
GS
D
GS
25 V f
GS
10 V I
D
D
D
= 250 A
L
L
GS
= 250 A
=
= 25 A
= 15 A
= 0.3
= 10 V
= 15 A
= 0 V
= 0 V
J
J
20 V
J
J
G
D
= 125 C
= 175 C
= 125 C
= 175 C
1 MH
= 50 A
= 2.5
50 A
FaxBack [phone]
30
50
20
1
0.0075
0.011
2700
680
360
8.5
9.5
1.2
40
45
12
35
12
40
2
7
www.siliconix.com
0.010
0.016
0.019
0.015
150
180
1.5
50
70
20
15
60
20
50
80
100
1
nA
nC
pF
ns
ns
ns
V
V
A
S
A
A
V
C
F