fdb66n15 Fairchild Semiconductor, fdb66n15 Datasheet - Page 3

• Manufacturer Part Number: fdb66n15
• Description: Fdb66n15 150v N-channel Mosfet
• Manufacturer: Fairchild Semiconductor

FDB66N15 Rev A
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
10
10
10
2
1
0
10
6000
4000
2000
-1
Drain Current and Gate Voltage
Top :
Bottom : 5.5 V
0.10
0.08
0.06
0.04
0.02
0.00
0
10
-1
0
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
V
GS
C
C
C
V
oss
iss
rss
DS
50
V
, Drain-Source Voltage [V]
DS
10
, Drain-Source Voltage [V]
0
10
I
D
0
, Drain Current [A]
100
V
GS
= 10V
C
C
C
iss
oss
rss
10
= C
= C
= C
1
10
1. 250µ s Pulse Test
2. T
V
150
Notes :
gs
gd
ds
GS
1
+ C
+ C
C
Note : T
= 20V
= 25
gd
gd
(C
℃
1. V
2. f = 1 MHz
ds
J
Note ;
= 25
= shorted)
GS
= 0 V
℃
200
3
10
10
10
10
10
10
12
10
8
6
4
2
0
2
1
0
2
1
0
0.2
0
2
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
0.4
10
Variation vs. Source Current
150
150
0.6
25
4
o
o
C
C
25
V
V
Q
0.8
SD
GS
G
20
and Temperatue
, Source-Drain voltage [V]
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
V
V
V
1.0
DS
DS
DS
6
= 30V
= 75V
= 120V
30
1.2
-55
o
C
1.4
8
40
1.6
1. V
2. 250µ s Pulse Test
Notes :
1. V
2. 250µ s Pulse Test
Note : I
GS
Notes :
1.8
= 0V
DS
10
50
= 40V
D
= 66A
2.0
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60
2.2
12