fdp14n30 Fairchild Semiconductor, fdp14n30 Datasheet

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fdp14n30

Manufacturer Part Number
fdp14n30
Description
300v N-channel Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet
©2007 Fairchild Semiconductor Corporation
FDP14N30 / FDPF14N30 Rev. A
FDP14N30 / FDPF14N30
300V N-Channel MOSFET
Features
• 14A, 300V, R
• Low gate charge ( typical 18 nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings
Thermal Characteristics
* Drain current limited by maximum junction temperature
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J,
L
DSS
GSS
AS
AR
D
Symbol
Symbol
TJC
TCS
TJA
T
STG
rss
( typical 17 pF)
G
DS(on)
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
D
S
= 0.29: @V
TO-220
FDP Series
GS
= 10 V
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25qC
Parameter
Parameter
C
= 25qC)
C
C
= 25qC)
= 100qC)
G
D
S
1
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TO-220F
FDPF Series
FDP14N30
FDP14N30
1.12
140
8.4
0.89
62.5
4
56
0.5
-55 to +150
300
r30
330
300
4.5
14
14
FDPF14N30
FDPF14N30
G
8.4
0.28
3.56
62.5
56
4 *
35
--
UniFET
February 2007
S
D
www.fairchildsemi.com
Unit
W/qC
Unit
qC/W
qC/W
qC/W
V/ns
mJ
mJ
qC
qC
W
V
A
A
A
V
A
TM

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fdp14n30 Summary of contents

Page 1

... Thermal Resistance, Case-to-Sink Typ. TCS R Thermal Resistance, Junction-to-Ambient TJA ©2007 Fairchild Semiconductor Corporation FDP14N30 / FDPF14N30 Rev. A Description = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... Starting 14A, di/dt d 200A/Ps Starting DSS 4. Pulse Test: Pulse width d 300Ps, Duty Cycle Essentially Independent of Operating Temperature Typical Characteristics FDP14N30 / FDPF14N30 Rev. A Package Reel Size TO-220 - TO-220F - T = 25°C unless otherwise noted C Conditions 250PA ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 2000 C oss C iss 1000 C rss Drain-Source Voltage [V] DS FDP14N30 / FDPF14N30 Rev. A Figure 2. Transfer Characteristics Notes : 1. 250 P s Pulse Test Figure 4. Body Diode Forward Voltage ...

Page 4

... Limited DS(on Drain-Source Voltage [V] DS Figure 10. Maximum Drain Currentvs. Case Temperature Case Temperature [ C FDP14N30 / FDPF14N30 Rev. A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 * Notes : 250 A P 0.5 D 0.0 50 100 150 200 -100 o C] Figure 9-2 ...

Page 5

... Typical Performance Characteristics Figure 11-1. Transient Thermal Response Curve - FDP14N30 Figure 11-2. Transient Thermal Response Curve - FDPF14N30 FDP14N30 / FDPF14N30 Rev. A (Continued ...

Page 6

... Unclamped Inductive Switching Test Circuit & Waveforms FDP14N30 / FDPF14N30 Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... FDP14N30 / FDPF14N30 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms 7 www.fairchildsemi.com ...

Page 8

... Mechanical Dimensions FDP14N30 / FDPF14N30 Rev. A TO-220 8 www.fairchildsemi.com ...

Page 9

... Mechanical Dimensions MAX1.47 0.80 H0.10 0.35 H0.10 2.54TYP [2.54 ] H0.20 FDP14N30 / FDPF14N30 Rev. A TO-220F 10.16 ø3.18 H0.20 H0.10 (7.00) (1.00x45G) #1 2.54TYP [2.54 ] H0.20 9.40 H0.20 9 2.54 H0.20 (0.70) +0.10 0.50 2.76 –0.05 H0.20 www.fairchildsemi.com ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Across the board. Around the world.¥ ActiveArray¥ Bottomless¥ Build it Now¥ CoolFET¥ ...

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