psmn063 NXP Semiconductors, psmn063 Datasheet - Page 7

• Manufacturer Part Number: psmn063
• Description: Psmn063-150d N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 08594
Product data
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Forward transconductance as a function of
V GS(th)
I
T
D
(V)
g fs
(S)
j
= 1 mA; V
= 25 C; V
40
30
20
10
junction temperature.
drain current; typical values.
5
4
3
2
1
0
0
-60
0
DS
DS
= V
0
I
D
GS
10
R
DSon
T j = 175 o C
T j = 25 o C
60
max
min
typ
20
120
I D (A)
T j (ºC)
003aaa153
03aa32
180
Rev. 03 — 31 October 2001
30
N-channel enhancement mode field-effect transistor
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
I D
(A)
(pF)
T
V
C
10 -2
10 -6
10 -4
j
10 -1
10 -3
10 -5
GS
= 25 C; V
10 4
10 3
10 2
10
gate-source voltage.
as a function of drain-source voltage; typical
values.
= 0 V; f = 1 MHz
10 -1
0
DS
min
= 5 V
1
2
PSMN063-150D
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
C oss
C rss
C iss
typ
10
4
max
V DS (V)
V GS (V)
003aaa154
03aa35
10 2
6
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