psmn063 NXP Semiconductors, psmn063 Datasheet - Page 2

• Manufacturer Part Number: psmn063
• Description: Psmn063-150d N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
3. Limiting values
Table 2:
In accordance with the Absolute Maximum Rating System (IEC 60134).
9397 750 08594
Product data
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
I
D
DM
S
SM
AS
DS
DGR
GS
tot
stg
j
AS
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
source (diode forward) current (DC)
peak source (diode forward) current
non-repetitive avalanche energy
non-repetitive avalanche current
Limiting values
Rev. 03 — 31 October 2001
Conditions
T
T
T
Figure 2
T
Figure 2
T
Figure 3
T
T
T
unclamped inductive load;
I
V
V
unclamped inductive load;
V
V
D
j
j
mb
mb
mb
mb
mb
mb
DD
GS
DD
GS
= 25 to 175
= 25 to 175
= 26 A; t
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
= 10 V; starting T
= 10 V; starting T
25 V; R
25 V; R
and
and
p
N-channel enhancement mode field-effect transistor
= 0.2 ms;
3
3
Figure 1
GS
GS
o
o
GS
C
C; R
GS
= 50 ;
= 50 ;
= 10 V;
= 10 V;
GS
p
p
j
j
= 25 C
= 25 C
= 20 k
10 s;
10 s
Min
PSMN063-150D
55
55
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Max
150
150
29
20
116
150
+175
+175
29
116
502
29
20
Unit
V
V
V
A
A
A
W
A
A
mJ
A
C
C
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