psmn063 NXP Semiconductors, psmn063 Datasheet - Page 5

• Manufacturer Part Number: psmn063
• Description: Psmn063-150d N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
5. Characteristics
Table 4:
T
9397 750 08594
Product data
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
j
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
g(tot)
gs
gd
r
= 25 C unless otherwise specified
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage I
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
turn-on rise time
turn-off delay time
turn-off fall time
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
Conditions
I
Figure 9
V
V
V
Figure 7
I
V
V
f = 1 MHz;
V
V
I
Figure 13
I
dI
V
D
D
D
S
S
DS
GS
GS
GS
GS
DD
GS
GS
S
T
T
T
T
T
T
T
T
T
= 250 A; V
= 1 mA; V
= 30 A; V
= 25 A; V
= 20 A;
/dt = 100 A/ s;
j
j
j
j
j
j
j
j
j
= 150 V; V
= 25 C
= 55 C
= 25 C
= 175 C
= 55 C
= 25 C
= 175 C
= 10 V; V
= 10 V; I
= 25 C
= 175 C
= 10 V;
= 0 V; V
= 75 V; R
= 10 V; R
= 0 V; V
Rev. 03 — 31 October 2001
and
Figure 12
GS
DS
Figure 14
DS
DS
DS
D
8
D
G
GS
= 15 A;
= 120 V;
= 0 V;
GS
DS
= V
= 25 V;
= 25 V
= 2.7 ;
= 5.6
= 0 V
= 0 V
= 0 V
N-channel enhancement mode field-effect transistor
GS
;
Min
150
133
2
1
PSMN063-150D
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Typ
3
0.05
0.02
60
55
10
20
2390
240
98
14
50
48
38
0.9
105
0.55
Max
6
10
500
100
63
176
27
1.2
Unit
V
V
V
V
V
nA
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
5 of 12
A
A
C