psmn063 NXP Semiconductors, psmn063 Datasheet - Page 6

• Manufacturer Part Number: psmn063
• Description: Psmn063-150d N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 08594
Product data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
R DSon
( )
T
T
j
0.20
j
(A)
0.16
0.12
0.08
0.04
I D
= 25 C
= 25 C
20
10
30
function of drain-source voltage; typical values.
of drain current; typical values.
0
0
0
0
4.4
4.6
5
0.4
4.8
V GS (V) = 10
5.0
10
0.8
8.0
5.2
15
1.2
V GS (V) =
5.4
20
1.6
6
8
25
V DS (V)
003aaa151
003aaa150
6.0
I D (A)
10
5.4
4.8
4.6
5.2
4.4
5.0
2.0
30
Rev. 03 — 31 October 2001
N-channel enhancement mode field-effect transistor
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain source on-state resistance
T
j
I D
(A)
a
= 25 C and 175 C; V
20
30
10
1.2
function of gate-source voltage; typical values.
2.4
2.0
1.6
0.8
factor as a function of junction temperature.
2.8
0
0.4
0
-60
a
-20
=
2
----------------------------- -
R
DSon 25 C
R
20
PSMN063-150D
DSon
T j = 175 o C
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
DS
4
60
I
D
R
100
25 o C
DSon
6
V GS (V)
140
003aaa152
T j ( o C)
03aa30
180
8
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