DIM200PHM33-A000 Dynex Semiconductor, DIM200PHM33-A000 Datasheet - Page 7

• Manufacturer Part Number: DIM200PHM33-A000
• Description: Half Bridge Igbt Module
• Manufacturer: Dynex Semiconductor

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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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200
150
100
400
350
300
250
400
350
300
250
200
150
100
50
50
0
0
0
0
Fig. 9 Diode reverse bias safe operating area
V
and not the auxiliary terminals
T
Fig. 7 Diode typical forward characteristics
F
j
= 125˚C
is measured at power busbars
0.5
T
T
500
j
j
= 125˚C
= 25˚C
1.0
1000
Reverse voltage, V
Forward voltage, V
1.5
1500
2.0
2000
2.5
F
R
- (V)
- (V)
2500
3.0
3000
3.5
3500
4.0
500
400
300
200
100
100
0.1
0
10
0.001
1
0
Fig. 8 Reverse bias safe operating area
500
Fig. 10 Transient thermal impedance
Collector emitter voltage, V
0.01
1000
Pulse width, t
1500
Diode
DIM200PHM33-A000
0.1
2000
p
- (s)
2500
ce
- (V)
1
3000
Transistor
3500
7/10
10