DIM200PHM33-A000 Dynex Semiconductor, DIM200PHM33-A000 Datasheet - Page 4

• Manufacturer Part Number: DIM200PHM33-A000
• Description: Half Bridge Igbt Module
• Manufacturer: Dynex Semiconductor

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DIM200PHM33-A000
ELECTRICAL CHARACTERISTICS
T
case
Note:
†
L* is the circuit inductance + L
4/10
Symbol
Measured at the power busbars and not the auxiliary terminals)
V
V
SC
= 25˚C unless stated otherwise.
R
CE(sat)
C
I
I
C
GE(TH)
V
I
GES
L
CES
I
FM
INT
F
F
ies
res
M
Data
†
†
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance
Reverse transfer capacitance
Module inductance - per switch
Internal transistor resistance - per switch
Short circuit. I
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
SC
Parameter
M
V
V
V
I
V
V
DC
t
I
I
V
V
T
t
IEC 60747-9
C
p
F
F
p
j
GE
GE
GE
GE
GE
CE
CE
= 1ms
= 200A
= 200A, T
= 125˚C, V
=20mA, V
10 s, V
= 0V, V
= 0V, V
= 20V, V
= 15V, I
= 15V, I
= 25V, V
= 25V, V
Test Conditions
CE(max)
CE
CE
C
C
case
CC
GE
GE
GE
= 200A
= 200A, , T
= V
= V
CE
= 2500V,
= V
= 0V, f = 1MHz
= 0V, f = 1MHz
= 125˚C
= V
= 0V
CES
CES
CE
CES
-
-
, T
– L*. di/dt
case
case
= 125˚C
= 125˚C
I
I
1
2
Min.
4.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
www.dynexsemi.com
1300
1100
Typ.
0.65
0.54
200
400
5.5
3.4
4.4
2.5
2.5
45
30
-
-
-
Max.
6.5
15
1
2
-
-
-
-
-
-
-
-
-
-
-
-
Units
mA
mA
m
nH
nF
nF
V
V
V
A
A
V
V
A
A
A