DIM200PHM33-A000 Dynex Semiconductor, DIM200PHM33-A000 Datasheet - Page 6

• Manufacturer Part Number: DIM200PHM33-A000
• Description: Half Bridge Igbt Module
• Manufacturer: Dynex Semiconductor

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DIM200PHM33-A000
TYPICAL CHARACTERISTICS
6/10
500
450
400
350
300
250
200
150
100
400
350
300
250
200
150
100
50
Fig. 5 Typical switching energy vs collector current
50
0
0
0
0
Conditions:
T
R
V
C
Common emitter
T
V
and not the auxiliary terminals
c
cc
g
ge
case
ce
= 125°C,
= 10 Ohms,
= 1800V,
= 33nF
is measured at power busbars
Fig. 3 Typical output characteristics
= 25˚C
1
50
Collector-emitter voltage, V
Collector current, I
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
2
100
3
C
- (A)
4
ce
150
- (V)
V
V
V
V
E
E
E
5
ge
ge
ge
ge
on
off
rec
= 10V
= 12V
= 15V
= 20V
(mJ)
(mJ)
(mJ)
200
6
400
350
300
250
200
150
100
50
700
600
500
400
300
200
100
0
Fig. 6 Typical switching energy vs gate resistance
0
0
5
Common emitter
T
V
and not the auxiliary terminals
ce
case
Conditions:
T
I
V
C
C
c
cc
ge
is measured at power busbars
= 200A
= 125°C
= 1800V
= 125˚C
= 33nF
1
Fig. 4 Typical output characteristics
10
Collector-emitter voltage, V
2
Gate resistance, R
3
15
4
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g
20
5
- (ohms)
ce
- (V)
6
25
V
V
V
V
ge
ge
ge
ge
E
E
E
7
= 10V
= 12V
= 15V
= 20V
on
off
rec
(mJ)
(mJ)
(mJ)
8
30