DIM200PHM33-A000 Dynex Semiconductor, DIM200PHM33-A000 Datasheet - Page 5

• Manufacturer Part Number: DIM200PHM33-A000
• Description: Half Bridge Igbt Module
• Manufacturer: Dynex Semiconductor

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ELECTRICAL CHARACTERISTICS
T
T
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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case
case
Symbol
Symbol
= 25˚C unless stated otherwise
= 125˚C unless stated otherwise
E
E
E
E
t
t
E
t
t
E
Q
Q
Q
d(off)
d(on)
d(off)
d(on)
I
I
t
OFF
t
REC
t
OFF
t
REC
ON
ON
rr
rr
f
r
f
r
rr
rr
g
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Parameter
Parameter
I
I
F
F
R
R
= 200A, V
= 200A, V
dI
Test Conditions
G(ON)
Test Conditions
G(ON)
dI
F
V
F
V
/dt = 1000A/ s
V
V
C
/dt = 850A/ s
C
L ~ 100nH
L ~ 100nH
CE
CE
GE
GE
= R
I
= R
I
ge
ge
C
C
= 1800V
= 1800V
= 200A
= 200A
= 15V
= 33nF
= 15V
= 33nF
G(OFF)
G(OFF)
R
R
= 1800V,
= 1800V,
=10
=10
DIM200PHM33-A000
Min.
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1400
1350
Typ.
Typ.
250
210
550
250
440
150
150
200
200
150
550
250
300
140
110
2.5
80
Max.
Max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Units
Units
mJ
mJ
mJ
mJ
mJ
mJ
ns
ns
ns
ns
ns
ns
ns
ns
A
A
C
C
C
5/10