DIM200PHM33-A000 Dynex Semiconductor, DIM200PHM33-A000 Datasheet
DIM200PHM33-A000
Related parts for DIM200PHM33-A000
DIM200PHM33-A000 Summary of contents
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... The DIM200PHM33-A000 is a half bridge 3300V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10 s short circuit withstand ...
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... DIM200PHM33-A000 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. ...
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... Junction temperature Storage temperature range stg - Screw torque Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM200PHM33-A000 Test Conditions Min. Continuous dissipation - junction to case Continuous dissipation - junction to case Mounting torque 5Nm (with mounting grease) Transistor ...
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... DIM200PHM33-A000 ELECTRICAL CHARACTERISTICS T = 25˚C unless stated otherwise. case Parameter Symbol I Collector cut-off current CES I Gate leakage current GES V Gate threshold voltage GE(TH) V † Collector-emitter saturation voltage CE(sat) I Diode forward current F I Diode maximum forward current FM V † Diode forward voltage ...
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... E Turn-on energy loss ON Q Diode reverse recovery charge rr I Diode reverse current rr E Diode reverse recovery energy REC Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM200PHM33-A000 Test Conditions Min 200A - 15V - 1800V - CE ...
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... DIM200PHM33-A000 TYPICAL CHARACTERISTICS 400 Common emitter T = 25˚C case V is measured at power busbars ce 350 and not the auxiliary terminals 300 250 200 150 100 Collector-emitter voltage, V Fig. 3 Typical output characteristics 500 Conditions 125°C, c 450 Ohms, ...
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... Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 500 400 300 200 100 2.0 2.5 3.0 3.5 4.0 - (V) F 100 2000 2500 3000 3500 - (V) R DIM200PHM33-A000 0 0 500 1000 1500 2000 2500 Collector emitter voltage Fig. 8 Reverse bias safe operating area Diode 10 1 0.1 0.001 0.01 0.1 Pulse width (s) p Fig ...
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... DIM200PHM33-A000 400 350 300 250 200 150 100 Fig current rating vs case temperature 8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 80 100 120 140 www.dynexsemi.com ...
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... PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com Nominal weight: 750g Module outline type code: P DIM200PHM33-A000 9/10 ...
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... Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. ...