FRS9230R Fairchild Semiconductor, FRS9230R Datasheet

FRS9230R

Manufacturer Part Number

FRS9230R

Description

4A, -200V, 1.32 Ohm, Rad Hard, P-Channel Power MOSFET

Manufacturer

Fairchild Semiconductor

Datasheet

1.FRS9230R.pdf (8 pages)

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June 1998

Features

• 4A, -200V, RDS(on) = 1.32 Ω

• Second Generation Rad Hard MOSFET Results From New Design Concepts

• Gamma

• Gamma Dot

• Photo Current

• Neutron

Description

Intersil has designed a series of SECOND GENERATION hardened power MOS-

FETs of both N and P channel enhancement types with ratings from 100V to 500V,

1A to 60A, and on resistance as low as 25m Ω . Total dose hardness is offered at

100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm

for 500V product to 1E14n/cm

DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.

This MOSFET is an enhancement-mode silicon-gate power ﬁeld effect transistor of

the vertical DMOS (VDMOS) structure. It is specially designed and processed to

exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n

exposures. Design and processing efforts are also directed to enhance survival to

heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.

This part may be supplied as a die or in various packages other than shown above.

Reliability screening is available as either non TX (commercial), TX equivalent of

MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of

MIL-S-19500. Contact the Intersil Corporation High-Reliability Marketing group for

any desired deviations from the data sheet.

Absolute Maximum Ratings

Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS

Drain-Gate Voltage (RGS = 20k Ω ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

Continuous Drain Current

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

Maximum Power Dissipation

Inductive Current, Clamped, L = 100 µ H, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . . . ILM

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS

Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM

Operating And Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG

Lead Temperature (During Soldering)

TC = +25

TC = +100

TC = +25

TC = +100

Derated Above +25

Distance > 0.063 in. (1.6mm) From Case, 10s Max . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT

- Meets Pre-Rad Speciﬁcations to 100KRAD(Si)

- Survives 3E9RAD(Si)/sec at 80% BVDSS Typically

- 3.0nA Per-RAD(Si)/sec Typically

- Pre-RAD Speciﬁcations for 1E13 Neutrons/cm

- Deﬁned End Point Specs at 300KRAD(Si) and 1000KRAD(Si)

- Performance Permits Limited Use to 3000KRAD(Si)

- Survives 2E12 Typically If Current Limited to IDM

- Usable to 1E14 Neutrons/cm

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

for 100V product. Dose rate hardness (GAMMA

(TC = +25

C) Unless Otherwise Speciﬁed

FRS9230D, FRS9230R,

4A, -200V, 1.32 Ohm, Rad Hard,

)

P-Channel Power MOSFETs

Package

Symbol

CAUTION: Beryllia Warning per MIL-S-19500

FRS9230H

FRS9230D, R, H

-55 to +150

refer to package specifications.

-200

0.40

± 20

300

FRS9230D, FRS9230R, FRS9230H Rev. A

TO-257AA

UNITS

Related parts for FRS9230R

FRS9230R Summary of contents

Page 1

... C) Unless Otherwise Speciﬁed FRS9230H Package TO-257AA CAUTION: Beryllia Warning per MIL-S-19500 refer to package specifications. Symbol FRS9230D UNITS -200 V -200 ± 0. -55 to +150 C o 300 C FRS9230D, FRS9230R, FRS9230H Rev. A ...

Page 2

... ELECTRONIC SWITCH OPENS WHEN CURRENT I AS TRANSFORMER - TO OBTAIN P 50Ω DUT 50Ω ≤ 20V V GS FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT FRS9230D, FRS9230R, FRS9230H Rev. A UNITS Ω C/W IS REACHED 50V-150V ...

Page 3

... FRS9230D, R VGS = -10V VDS(on) FRS9230H VGS = -16V RDS(on) FRS9230D, R VGS = -10V RDS(on) FRS9230H VGS = -14V LIMITS MIN MAX UNITS -200 - V -190 - V -2.0 -4.0 V -2.0 -6 100 nA - 200 nA - 100 nA - 200 nA µ µ 100 - -5. -8.31 V Ω - 1.32 Ω - 1.98 FRS9230D, FRS9230R, FRS9230H Rev. A ...

Page 4

Page 5

Page 6

... Subgroups A2, A3, A4, A5 and A7 Data - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups B1, B3, B4, B5 and B6 Data - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups C1, C2, C3 and C6 Data - Attributes Data Sheet - Hi-Rel Lot Traveler - Pre and Post Radiation Data FRS9230D, FRS9230R, FRS9230H Rev. A ...

Page 7

... MAX MIN MAX 0.190 0.200 4.83 5.08 0.035 0.045 0.89 1.14 0.025 0.035 0.64 0.88 0.060 0.090 1.53 2.28 0.645 0.665 16.39 16.89 0.410 0.420 10.42 10.66 0.100 TYP 2.54 TYP 0.200 BSC 5.08 BSC 0.230 0.250 5.85 6.35 0.110 0.130 2.80 3.30 0.600 0.650 15.24 16.51 - 0.035 - 0.88 0.140 0.150 3.56 3.81 0.113 0.133 2.88 3.37 FRS9230D, FRS9230R, FRS9230H Rev. A NOTES - - ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ HiSeC™ DenseTrench™ ...

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