PBSS8110X Philips Semiconductors, PBSS8110X Datasheet - Page 9

• Manufacturer Part Number: PBSS8110X
• Description: NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
9397 750 14956
Product data sheet
Fig 13. Collector-emitter saturation resistance as a
Fig 15. Collector current as a function of collector-emitter voltage; typical values
R
(10) I
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
(7) I
(8) I
(9) I
CEsat
( )
10
10
10
10
1
3
2
1
10
I
function of collector current; typical values
T
C
B
B
B
B
B
B
B
B
B
B
amb
/I
= 35 mA
= 31.5 mA
= 28 mA
= 24.5 mA
= 21 mA
= 17.5 mA
= 14 mA
= 10.5 mA
= 7 mA
= 3.5 mA
1
B
= 20; T
= 25 C
1
amb
= 25 C
10
10
2
(A)
I
C
1.6
1.2
0.8
0.4
2
0
0
10
001aaa502
3
I
C
(mA)
1
10
Rev. 01 — 11 May 2005
4
2
(10)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
Fig 14. Collector-emitter saturation resistance as a
3
R
CEsat
( )
10
10
10
10
1
3
2
1
10
I
function of collector current; typical values
C
/I
100 V, 1 A NPN low V
4
1
B
001aaa496
V
= 50; T
CE
(V)
1
5
amb
= 25 C
10
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
10
PBSS8110X
2
CEsat
10
(BISS) transistor
001aaa503
3
I
C
(mA)
10
4
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