PBSS8110X Philips Semiconductors, PBSS8110X Datasheet - Page 3

• Manufacturer Part Number: PBSS8110X
• Description: NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
5. Limiting values
9397 750 14956
Product data sheet
Table 5:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Symbol
V
V
V
I
I
I
P
T
T
T
C
CM
B
Fig 1. Power derating curves
j
amb
stg
CBO
CEO
EBO
tot
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
Device mounted on a ceramic PCB, Al
(1) Ceramic PCB, Al
(2) FR4 PCB; mounting pad for collector 6 cm
(3) FR4 PCB; standard footprint
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
junction temperature
ambient temperature
storage temperature
P
(W)
2
tot
O
2.0
1.6
1.2
0.8
0.4
Rev. 01 — 11 May 2005
3
0
, standard footprint
0
(1)
(2)
(3)
2
40
O
3
Conditions
open emitter
open base
open collector
single pulse;
t
T
, standard footprint.
p
amb
1 ms
2
100 V, 1 A NPN low V
25 C
80
120
T
amb
006aaa408
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
( C)
[1]
[2]
[3]
160
Min
-
-
-
-
-
-
-
-
-
-
65
65
PBSS8110X
CEsat
(BISS) transistor
Max
120
100
5
1
3
300
0.55
1.4
2.0
150
+150
+150
Unit
V
V
V
A
A
mA
W
W
W
2
C
C
C
.
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