PBSS8110X Philips Semiconductors, PBSS8110X Datasheet

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PBSS8110X

Manufacturer Part Number
PBSS8110X
Description
NPN low VCEsat (BISS) transistor
Manufacturer
Philips Semiconductors
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PBSS8110X
Manufacturer:
NXP/恩智浦
Quantity:
20 000
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
NPN low V
TO-243) SMD plastic package.
PNP complement: PBSS9110X.
Table 1:
[1]
Symbol Parameter
V
I
I
R
C
CM
CEO
CEsat
PBSS8110X
100 V, 1 A NPN low V
Rev. 01 — 11 May 2005
SOT89 package
Low collector-emitter saturation voltage V
High collector current capability: I
High efficiency leading to less heat generation
Major application segments:
Peripheral driver:
DC-to-DC converter
Pulse test: t
Automotive 42 V power
Telecom infrastructure
Industrial
Driver in low supply voltage applications (e.g. lamps and LEDs)
Inductive load driver (e.g. relays, buzzers and motors)
collector-emitter voltage
collector current (DC)
peak collector current
collector-emitter
saturation resistance
CEsat
Quick reference data
p
Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/
300 s;
0.02.
CEsat
Conditions
open base
single pulse;
t
I
I
p
C
B
= 100 mA
= 1 A;
C
1 ms
and I
(BISS) transistor
CM
CEsat
[1]
Min
-
-
-
-
Product data sheet
Typ
-
-
-
165
Max
100
1
3
200
Unit
V
A
A
m

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PBSS8110X Summary of contents

Page 1

... PBSS8110X 100 NPN low V Rev. 01 — 11 May 2005 1. Product profile 1.1 General description NPN low V TO-243) SMD plastic package. PNP complement: PBSS9110X. 1.2 Features SOT89 package Low collector-emitter saturation voltage V High collector current capability: I High efficiency leading to less heat generation 1.3 Applications ...

Page 2

... Package Name Description SC-62 plastic surface mounted package; collector pad for good heat transfer; 3 leads Marking codes Marking code *4B Rev. 01 — 11 May 2005 PBSS8110X 100 NPN low V (BISS) transistor CEsat Simplified outline Symbol [1] © Koninklijke Philips Electronics N.V. 2005. All rights reserved. ...

Page 3

... T amb junction temperature ambient temperature storage temperature O , standard footprint 2.0 (1) P tot (W) 1.6 (2) 1.2 0.8 (3) 0 standard footprint 2 3 Rev. 01 — 11 May 2005 PBSS8110X 100 NPN low V (BISS) transistor CEsat Min Max - 120 - 100 - 300 [ 0.55 [2] - 1.4 [3] - 2.0 - ...

Page 4

... Product data sheet Thermal characteristics Parameter Conditions thermal resistance from in free air junction to ambient thermal resistance from junction to solder point O , standard footprint Rev. 01 — 11 May 2005 PBSS8110X 100 NPN low V (BISS) transistor CEsat Min Typ [ [ [ 006aaa409 2 1 ...

Page 5

... Fig 4. Transient thermal impedance from junction to ambient as a function of pulse time; typical values 9397 750 14956 Product data sheet Rev. 01 — 11 May 2005 PBSS8110X 100 NPN low V (BISS) transistor CEsat 006aaa411 (s) p 006aaa410 ...

Page 6

... 0 0.025 0.025 A Bon Boff mA 100 MHz MHz Rev. 01 — 11 May 2005 PBSS8110X 100 NPN low V (BISS) transistor CEsat Min Typ Max - - 100 - - 100 - - 100 150 - - 150 - ...

Page 7

... T (3) T Fig 6. Base-emitter voltage as a function of collector 001aaa504 10 V CEsat (mV (mA) C Fig 8. Collector-emitter saturation voltage as a Rev. 01 — 11 May 2005 PBSS8110X 100 NPN low V CEsat (1) (2) ( amb = 25 C amb ...

Page 8

... Fig 10. Base-emitter saturation voltage as a function of 001aaa499 10 R CEsat ( ) (mA) C (1) T (2) T (3) T Fig 12. Collector-emitter saturation resistance as a Rev. 01 — 11 May 2005 PBSS8110X 100 NPN low V CEsat (1) (2) ( amb = 25 C amb ...

Page 9

... Fig 14. Collector-emitter saturation resistance (1) (A) (2) 1.6 (3) (4) (5) (6) 1.2 (7) (8) (9) 0.8 (10) 0 Rev. 01 — 11 May 2005 PBSS8110X 100 NPN low V CEsat 50 amb function of collector current; typical values 001aaa496 ...

Page 10

... Product data sheet (probe) oscilloscope 450 0 0.025 Bon Rev. 01 — 11 May 2005 PBSS8110X 100 NPN low V CEsat I (100 %) Bon I Boff off (probe) o ...

Page 11

... For further information and the availability of packing methods, see 9397 750 14956 Product data sheet 4.6 4.4 1.8 1.4 2.6 2 0.53 0.40 1.5 3 Dimensions in mm Packing methods Package Description SOT89 8 mm pitch tape and reel Rev. 01 — 11 May 2005 PBSS8110X 100 NPN low V (BISS) transistor CEsat 1.6 1.4 4.25 3.75 1.2 0.8 3 0.48 0.44 0.35 0.23 04-08-03 [1] Packing quantity 1000 -115 Section 18. ...

Page 12

... Reflow soldering is the only recommended soldering method. Dimensions 3.96 mm 1.6 mm 001aaa234 Rev. 01 — 11 May 2005 PBSS8110X 100 NPN low V (BISS) transistor CEsat 1.70 4.85 0.50 1.20 1 msa442 0.60 (3x) 0.70 (3x 2 0.5 mm 3.96 mm 1.6 mm 001aaa235 Fig 21. FR4 PCB, mounting pad for ...

Page 13

... Product data sheet Data sheet status Change notice Product data sheet - Rev. 01 — 11 May 2005 PBSS8110X 100 NPN low V (BISS) transistor CEsat Doc. number Supersedes 9397 750 14956 - © Koninklijke Philips Electronics N.V. 2005. All rights reserved. ...

Page 14

... Trademarks Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. Rev. 01 — 11 May 2005 PBSS8110X 100 NPN low V (BISS) transistor CEsat © Koninklijke Philips Electronics N.V. 2005. All rights reserved ...

Page 15

... Disclaimers Trademarks Contact information . . . . . . . . . . . . . . . . . . . . 14 PBSS8110X 100 NPN low V © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice ...

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