PBSS8110X Philips Semiconductors, PBSS8110X Datasheet - Page 8

• Manufacturer Part Number: PBSS8110X
• Description: NPN low VCEsat (BISS) transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
9397 750 14956
Product data sheet
Fig 9. Collector-emitter saturation voltage as a
Fig 11. Base-emitter saturation voltage as a function of
V
V
(mV)
(mV)
CEsat
BEsat
1200
1000
800
600
400
10
10
10
10
4
3
2
10
10
I
function of collector current; typical values
I
collector current; typical values
C
C
/I
/I
1
1
B
B
= 50; T
= 20; T
1
1
amb
amb
= 25 C
= 25 C
10
10
10
10
2
2
10
10
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001aaa499
3
3
I
I
C
C
(mA)
(mA)
10
10
Rev. 01 — 11 May 2005
4
4
Fig 10. Base-emitter saturation voltage as a function of
Fig 12. Collector-emitter saturation resistance as a
V
R
(mV)
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
BEsat
CEsat
( )
1200
1000
10
800
600
400
200
10
10
10
1
10
3
2
1
10
I
collector current; typical values
I
function of collector current; typical values
C
C
amb
amb
amb
amb
amb
amb
/I
/I
100 V, 1 A NPN low V
1
1
B
B
= 10
= 10
= 55 C
= 25 C
= 100 C
= 100 C
= 25 C
= 55 C
1
1
10
10
(1)
(2)
(3)
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
10
10
PBSS8110X
2
2
CEsat
10
10
(BISS) transistor
001aaa498
3
001aaa501
3
I
I
C
C
(mA)
(mA)
(1)
(2)
(3)
10
10
4
4
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