MT18VDDT3272 Micron, MT18VDDT3272 Datasheet

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MT18VDDT3272

Manufacturer Part Number
MT18VDDT3272
Description
184-Pin Registered DDR SDRAM DIMMs (x72)
Manufacturer
Micron
Datasheet
DDR SDRAM
DIMM MODULE
FEATURES
• 184-pin dual in-line memory module (DIMM)
• Utilizes 200 Mb/s and 266 Mb/s DDR SDRAM
• ECC-optimized pinout
• 256MB (32 Meg x 72), 512MB (64 Meg x 72)
• V
• V
• 2.5V I/O (SSTL_2 compatible)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
• Internal, pipelined double data rate (DDR) architec-
• Bidirectional data strobe (DQS) transmitted/
• Differential clock inputs (CK and CK# - can be
• Four internal device banks for concurrent operation
• Programmable burst lengths: 2, 4, or 8
• Auto precharge option
• Auto Refresh and Self Refresh Modes
• 15.6µs (MT18VDDT3272AG), 7.8125µs
• Serial Presence Detect (SPD) with EEPROM
• Fast data transfer rates PC2100 or PC1600
• Programmable READ CAS latency
• Gold-plated edge contacts
PART NUMBERS AND TIMING PARAMETERS
NOTE: All part numbers end with a two-place code (not shown), designating component and PCB revisions. Consult factory for
32, 64 Meg x 72 DDR SDRAM DIMMs
DD18C32_64X72AG_B.p65–Rev. B, Pub. 1/02
PART NUMBER
MT18VDDT3272AG-26A__
MT18VDDT3272AG-265__
MT18VDDT3272AG-202__
MT18VDDT6472AG-26A__
MT18VDDT6472AG-265__
MT18VDDT6472AG-202__
components
aligned with data for WRITEs
ture; two data accesses per clock cycle
received with data—i.e., source-synchronous data
capture
multiple clocks, CK0/CK0#, CK1/CK1#, etc.)
(MT18VDDT6472AG) maximum average periodic
refresh interval
DD
DDSPD
= V
current revision codes. Example: MT18VDDT6472AG-265A1
DD
= +2.2V to +5.5V
Q= +2.5V ±0.2V
MARKING DENSITY
PART
-26A
-26A
-265
-202
-265
-202
MODULE CONFIGURATION
256MB
256MB
256MB
512MB
512MB
512MB
32 Meg x 72
64 Meg x 72
32 Meg x 72
32 Meg x 72
64 Meg x 72
64 Meg x 72
1
MT18VDDT3272AG - 256MB
MT18VDDT6472AG - 512MB
For the latest data sheet, please refer to the Micron Web
site:
ADDRESS TABLE
OPTIONS
• Package
• Frequency/CAS Latency
Refresh Count
Row Addressing
Device Bank Addressing
Device Configuration
Column Addressing
Module Bank Addressing
Unbuffered
184-pin DIMM (gold)
266 MHz/CL = 2 (133 MHz DDR SDRAMs)
266 MHz/CL = 2.5 (133 MHz DDR SDRAMs) -265
200 MHz/CL = 2 (100 MHz DDR SDRAMs)
www.micron.com/datasheets
TRANSFER
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2.1 GB/s
2.1 GB/s
1.6 GB/s
2.1 GB/s
2.1 GB/s
1.6 GB/s
184-pin DDR SDRAM DIMMs
RATE
256MB, 512MB (ECC x72)
DATA FREQUENCY
MEMORY CLOCK/
184-Pin DIMM
7.5ns/266 Mb/s
7.5ns/266 Mb/s
7.5ns/266 Mb/s
7.5ns/266 Mb/s
10ns/200 Mb/s
10ns/200 Mb/s
MO-206
4 (BA0, BA1)
4K (A0–A11)
16 Meg x 8
1K (A0–A9)
2 (S0#, S1#)
256MB
4K
(CL -
©2002, Micron Technology, Inc.
LATENCY
MARKING
4 (BA0, BA1)
8K (A0–A12)
32 Meg x 8
2 (S0#, S1#)
1K (A0–A9)
2.5-3-3
2.5-3-3
t
RCD -
2-3-3
2-2-2
2-3-3
2-2-2
512MB
8K
-26A
-202
G
A
t
RP)

Related parts for MT18VDDT3272

MT18VDDT3272 Summary of contents

Page 1

... Four internal device banks for concurrent operation • Programmable burst lengths • Auto precharge option • Auto Refresh and Self Refresh Modes • 15.6µs (MT18VDDT3272AG), 7.8125µs (MT18VDDT6472AG) maximum average periodic refresh interval • Serial Presence Detect (SPD) with EEPROM • ...

Page 2

... V SS NC/A12* 138 CK0# 161 DQ46 PIN 92 PIN 53 U13 U12 U11 U10 PIN 93 pin SS Micron Technology, Inc., reserves the right to change products or specifications without notice. PIN SYMBOL 162 DQ47 163 NC 164 V DD 165 DQ52 166 DQ53 167 NC 168 V DD ...

Page 3

... Serial Presence-Detect Data: SDA is a bidirectional pinused to transfer addresses and data into and out of the presence-detect portion of the module. Power Supply: +2.5V +0.2V. 3 256MB, 512MB (ECC x72) 184-pin DDR SDRAM DIMMs DESCRIPTION Micron Technology, Inc., reserves the right to change products or specifications without notice ©2002, Micron Technology, Inc. ...

Page 4

... TYPE Ground. Serial EEPROM positive power supply: 2.2V to 3.7V. This supply is isolated from the V – No Connects. 4 256MB, 512MB (ECC x72) 184-pin DDR SDRAM DIMMs DESCRIPTION /V Q supply Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. ...

Page 5

... SERIAL U20 SDA REF SA0 SA1 SA2 Micron Technology, Inc., reserves the right to change products or specifications without notice. 256MB, 512MB (ECC x72) DM CS# DQS DM CS# DQS DQ0 DQ0 DQ1 U14 DQ1 U5 DQ2 DQ2 DQ3 DQ3 DQ4 DQ4 ...

Page 6

... GENERAL DESCRIPTION The MT18VDDT3272AG and MT18VDDT6472AG are high-speed CMOS, dynamic random-access, 256MB and 512MB memory modules organized in a x72 (ECC) con- figuration. These modules use internally configured quad-bank DDR SDRAM devices. These DDR SDRAM modules use a double data rate architecture to achieve high-speed operation. The double ...

Page 7

... For a burst length of eight, A3-Ai select the eight- data-element block; A0-A2 select the first access within the block. 4. Whenever a boundary of the block is reached within a given sequence above, the following access wraps within the block. Micron Technology, Inc., reserves the right to change products or specifications without notice. Type = Interleaved 0-1 1-0 0-1-2-3 1-0-3-2 ...

Page 8

... DON’T CARE 8 Micron Technology, Inc., reserves the right to change products or specifications without notice. 256MB, 512MB (ECC x72) 184-pin DDR SDRAM DIMMs CAS Latency (CL) Table ...

Page 9

... BA1) must be “1, 0” to select the Extended Mode Register (vs. the base Mode Register). 2. The QFC# option is not supported. Extended Mode Register Definition Diagram 9 Micron Technology, Inc., reserves the right to change products or specifications without notice Address Bus 7 6 ...

Page 10

... Micron Technology, Inc., reserves the right to change products or specifications without notice. ADDR NOTES Bank/Row 3 H Bank/Col 4 L Bank/Col Code Op-Code ...

Page 11

... I 302.4 – OL MIN MAX V + 0.310 – REF – 0.310 REF 0. 0. Micron Technology, Inc., reserves the right to change products or specifications without notice. UNITS NOTES V 32 32, 36 µA µ UNITS ...

Page 12

... 2952 2367 (CKE LOW) Mode. DD Micron Technology, Inc., reserves the right to change products or specifications without notice. NOTES 20, 43 20, 43 21, 28 21 20 20, 44 ©2002, Micron Technology, Inc. ...

Page 13

... DD I 108 108 TBD TBD TBD TBD (CKE LOW) Mode. DD Micron Technology, Inc., reserves the right to change products or specifications without notice. UNITS NOTES 21, 28 21 ...

Page 14

... WTR DQSQ t REFC 140.6 t REFI 15.6 t VTD 0 t XSNR 75 t XSRD 200 14 Micron Technology, Inc., reserves the right to change products or specifications without notice. 256MB, 512MB (ECC x72) -265 -202 MIN MAX MIN MAX UNITS NOTES -0.75 +0.75 -0.8 +0 0.45 0.55 0.45 0. 0.45 0.55 0.45 0.55 CK 7.5 13 ...

Page 15

... Meg x 72 DDR SDRAM DIMMs DD18C32_64X72AG_B.p65–Rev. B, Pub. 1/02 256MB, 512MB (ECC x72) 184-pin DDR SDRAM DIMMs SYMBOL Micron Technology, Inc., reserves the right to change products or specifications without notice. MIN MAX UNITS 8.0 10.0 pF 36.0 54.0 pF 18.0 27.0 pF 12.0 18.0 pF 18.0 27.0 pF ©2002, Micron Technology, Inc. ...

Page 16

... CK that meets the minimum absolute value for the respective parameter. (MAX) for I measurements is the largest multiple that meets the maximum absolute value for t RAS. Micron Technology, Inc., reserves the right to change products or specifications without notice 25° and IH are REF ...

Page 17

... DC level and DH for each 3.450 3.400 3.350 3.300 3.100 3.050 3.000 2.950 2.275 2.238 2.200 2.163 47/53 46.5/54.5 46/54 45.5/55.5 Micron Technology, Inc., reserves the right to change products or specifications without notice 3.250 2.900 2.125 45/55 ©2002, Micron Technology, Inc. ...

Page 18

... Volt, and at the same voltage and temperature. pull-up to pull-down current should be unity ±10%, for device drain-to-source voltages from 0.1V to 1.0 volt. Figure B Pull-Up Characteristics 0.0 0.5 1.0 1 (V) DD OUT Micron Technology, Inc., reserves the right to change products or specifications without notice. 2.0 2.5 ©2002, Micron Technology, Inc. ...

Page 19

... TT 48. Min modules is .7ns, to facilitate proper system operation 256MB, 512MB (ECC x72) 184-pin DDR SDRAM DIMMs REF later value at CL=2.5 in the SPD for -26A Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. ...

Page 20

... SCL DATA STABLE SDA Figure 3 20 256MB, 512MB (ECC x72) 184-pin DDR SDRAM DIMMs START BIT Figure 2 Definition of Start and Stop 8 9 Acknowledge Micron Technology, Inc., reserves the right to change products or specifications without notice. STOP BIT ©2002, Micron Technology, Inc. ...

Page 21

... CHIP ENABLE SU:DAT t SU:STO MIN 4 4.7 250 4.7 4.7 Micron Technology, Inc., reserves the right to change products or specifications without notice BUF UNDEFINED MAX UNITS µs µs 1 µs ns µs µs ©2002, Micron Technology, Inc. ...

Page 22

... HIGH 100 t LOW 4 SCL 100 t SU:DAT 250 t SU:STA 4.7 t SU:STO 4.7 t WRC 10 Micron Technology, Inc., reserves the right to change products or specifications without notice. MAX UNITS µA 10 µA 30 µ UNITS NOTES µs µ µs µ ...

Page 23

... AC – RRD 15 t RCD 20 t RAS 40 128MB or 256MB t IS 1.0 (-26A/-265) 1.1 (-202) 23 256MB, 512MB (ECC x72) 184-pin DDR SDRAM DIMMs MT18VDDT3272AG MT18VDDT6472AG ...

Page 24

... Contact factory for additional information regarding this option. NOTE: 1. “1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW.” Variable Data. 32, 64 Meg x 72 DDR SDRAM DIMMs DD18C32_64X72AG_B.p65–Rev. B, Pub. 1/02 184-pin DDR SDRAM DIMMs ENTRY (VERSION) MT18VDDT3272AG t IH 1.0 (-26A/-265) 1.1 (-202 ...

Page 25

... S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 E-mail: prodmktg@micron.com, Internet: http://www.micron.com, Customer Comment Line: 800-932-4992 Micron is a registered trademark and the Micron logo and M logo are trademarks of Micron Technology, Inc. 32, 64 Meg x 72 DDR SDRAM DIMMs DD18C32_64X72AG_B.p65–Rev. B, Pub. 1/02 ...

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