IPB100N04S4-H2 Infineon Technologies, IPB100N04S4-H2 Datasheet - Page 7

• Manufacturer Part Number: IPB100N04S4-H2
• Description: OptiMOS-T2 Power-Transistor
• Manufacturer: Infineon Technologies

Rev. 1.0
13 Avalanche energy
E
parameter: I
15 Typ. gate charge
V
parameter: V
AS
GS
= f(T
= f(Q
600
500
400
300
200
100
10
0
9
8
7
6
5
4
3
2
1
0
25
0
j
)
gate
100 A
50 A
D
); I
25 A
DD
D
= 100 A pulsed
20
75
Q
T
gate
j
40
[°C]
8 V
[nC]
125
32 V
60
175
80
page 7
14 Drain-source breakdown voltage
V
16 Gate charge waveforms
BR(DSS)
Q
V
45
43
41
39
37
35
V
g (th)
g s(th)
-60
GS
= f(T
IPI100N04S4-H2, IPP100N04S4-H2
j
); I
Q
-20
g s
D
= 1 mA
20
Q
T
g
j
Q
60
[°C]
sw
Q
IPB100N04S4-H2
g d
100
140
2010-04-13
Q
gate
180