IPB100N04S4-H2 Infineon Technologies, IPB100N04S4-H2 Datasheet - Page 5

• Manufacturer Part Number: IPB100N04S4-H2
• Description: OptiMOS-T2 Power-Transistor
• Manufacturer: Infineon Technologies

Rev. 1.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
400
350
300
250
200
150
100
400
350
300
250
200
150
100
50
50
0
0
DS
GS
0
3
); T
); V
GS
j
j
DS
= 25 °C; SMD
= 6V
10 V
4
1
175 °C
25 °C
V
V
GS
DS
5
2
[V]
[V]
-55 °C
7 V
6
3
5.5 V
6.5 V
6 V
page 5
7
4
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. drain-source on-state resistance
R
DS(on)
DS(on)
3.5
2.5
1.5
9
7
5
3
1
= f(I
= f(T
4
3
2
1
0
-60
D
j
); T
); I
5.5 V
IPI100N04S4-H2, IPP100N04S4-H2
GS
-20
D
j
= 25 °C; SMD
= 100 A; V
100
20
6 V
T
I
D
GS
j
60
[A]
[°C]
= 10 V; SMD
IPB100N04S4-H2
200
100
6.5 V
140
7 V
10 V
2010-04-13
300
180