IPB100N04S4-H2 Infineon Technologies, IPB100N04S4-H2 Datasheet - Page 4

• Manufacturer Part Number: IPB100N04S4-H2
• Description: OptiMOS-T2 Power-Transistor
• Manufacturer: Infineon Technologies

Rev. 1.0
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
= f(V
= f(T
1000
125
100
100
75
50
25
10
0
1
DS
0.1
0
C
); T
); V
p
C
GS
= 25 °C; D = 0; SMD
≥ 6 V
50
1
T
V
C
DS
100
1 ms
[°C]
[V]
100 µs
10
10 µs
150
1 µs
200
100
page 4
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
= f(T
120
100
10
10
10
= f(t
10
10
80
60
40
20
0
-1
-2
-3
1
0
C
10
); V
0
p
-6
)
0.05
0.01
0.1
single pulse
0.5
GS
IPI100N04S4-H2, IPP100N04S4-H2
10
≥ 6 V; SMD
p
/T
-5
50
10
-4
T
t
C
100
10
p
[°C]
[s]
-3
IPB100N04S4-H2
10
-2
150
10
2010-04-13
-1
200
10
0