IPB100N04S4-H2 Infineon Technologies, IPB100N04S4-H2 Datasheet - Page 6

• Manufacturer Part Number: IPB100N04S4-H2
• Description: OptiMOS-T2 Power-Transistor
• Manufacturer: Infineon Technologies

Rev. 1.0
9 Typ. gate threshold voltage
V
parameter: I
11 Typical forward diode characteristicis
IF = f(V
parameter: T
GS(th)
10
10
10
10
10
10
10
10
3.5
2.5
1.5
= f(T
4
3
2
3
3
2
2
1
1
0
0
SD
-60
0
0
)
j
); V
D
j
0.2
0.2
-20
GS
= V
0.4
0.4
20
DS
175 °C
175 °C
70 µA
0.6
0.6
V
V
T
SD
SD
j
60
[°C]
25 °C
25 °C
[V]
[V]
0.8
0.8
350 µA
100
1
1
140
1.2
1.2
180
1.4
1.4
page 6
10 Typ. capacitances
C = f(V
12 Avalanche characteristics
I
parameter: T
A S
= f(t
1000
100
10
10
10
10
10
1
4
3
2
1
AV
DS
0
1
)
); V
j(start)
IPI100N04S4-H2, IPP100N04S4-H2
GS
5
= 0 V; f = 1 MHz
10
10
V
t
AV
DS
150 °C
15
[µs]
[V]
IPB100N04S4-H2
100 °C
100
20
25 °C
25
2010-04-13
Coss
Crss
Ciss
1000
30