FDU6692 Fairchild Semiconductor, FDU6692 Datasheet - Page 5

• Manufacturer Part Number: FDU6692
• Description: 30V N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Typical Characteristics
10
1000
0.01
8
6
4
2
0
100
0.1
Figure 9. Maximum Safe Operating Area.
10
0
Figure 7. Gate Charge Characteristics.
1
0.01
I
D
= 14A
0.001
0.01
SINGLE PULSE
R
R
0.1
DS(ON)
V
T
1
JA
0.001
GS
A
5
= 96
= 25
= 10V
LIMIT
o
D = 0.5
o
C/W
C
0.1
V
0.2
10
DS
0.1
, DRAIN-SOURCE VOLTAGE (V)
0.05
Q
g
0.02
, GATE CHARGE (nC)
SINGLE PULSE
0.01
15
0.01
1
Figure 11. Transient Thermal Response Curve.
DC
20
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
10s
100ms
1s
V
DS
25
10ms
= 10V
10
1ms
20V
100µs
0.1
30
15V
100
35
t
1
, TIME (sec)
1
3000
2500
2000
1500
1000
80
60
40
20
500
0
0.1
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
C
RSS
5
V
1
Power Dissipation.
10
DS
C
OSS
, DRAIN TO SOURCE VOLTAGE (V)
10
t
1
, TIME (sec)
10
15
P(pk)
C
Duty Cycle, D = t
100
T
ISS
R
J
R
JA
- T
(t) = r(t) + R
JA
20
A
t
1
= 96 °C/W
SINGLE PULSE
= P * R
t
R
100
2
FDD/ FDU6692 Rev. C(W)
T
JA
A
V
f = 1MHz
= 96°C/W
= 25°C
GS
25
JA
= 0 V
1
(t)
JA
/ t
2
1000
1000
30