FDU6644 Fairchild Semiconductor, FDU6644 Datasheet

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FDU6644

Manufacturer Part Number
FDU6644
Description
30V N-Channel PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

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FDD6644/FDU6644
30V N-Channel PowerTrench MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
Applications
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
DC/DC converter
J
DSS
GSS
D
, T
JC
JA
G
Device Marking
STG
N-Channel
S
FDD6644
FDU6644
(TO-252)
D-PAK
TO-252
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
MOSFET
DS(ON)
D
and fast switching speed.
– Continuous
– Pulsed
has
FDD6644
FDU6644
Device
Parameter
G D S
been
designed
T
A
=25
D-PAK (TO-252)
I-PAK (TO-251)
(TO-251AA)
o
C unless otherwise noted
Package
I-PAK
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1b)
(Note 1)
(Note 1)
Features
67 A, 30 V.
High performance trench technology for extremely
low R
Low gate charge (25 nC typical)
High power and current handling capability
DS(ON)
Reel Size
Tube
13’’
R
R
DS(ON)
DS(ON)
-55 to +175
Ratings
G
100
3.8
1.6
2.2
30
67
68
96
Tape width
16
= 8.5 m
= 10.5 m
12mm
N/A
S
D
@ V
@ V
FDD/FDU6644 Rev C(W)
GS
April 2001
GS
2500 units
Quantity
= 10 V
= 4.5 V
75
Units
C/W
C/W
W
V
V
A
C

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FDU6644 Summary of contents

Page 1

... Package Reel Size D-PAK (TO-252) I-PAK (TO-251) Tube April 2001 DS(ON 10 4.5 V DS(ON Ratings Units 100 68 3.8 1.6 -55 to +175 2.2 C/W 96 C/W Tape width Quantity 13’’ 12mm 2500 units N/A 75 FDD/FDU6644 Rev C( ...

Page 2

... GEN Min Typ Max Units 240 mV 100 nA –100 –5 mV 6.5 8.5 7.5 10 3087 pF 489 pF 185 7.5 6.5 FDD/FDU6644 Rev C(W) ...

Page 3

... 2 determined by the user's board design 40°C/W when mounted 1in pad copper and V = 10V. Package current limitation is 21A DS(on) J(max) GS 3.2 A 0.7 1.2 V (Note 96°C/W when mounted minimum pad. FDD/FDU6644 Rev C(W) ...

Page 4

... Source Current and Temperature. = 3.0V 3.5V 4.0V 4.5V 6.0V 10V DRAIN CURRENT ( 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDD/FDU6644 Rev C(W) 10 1.2 ...

Page 5

... ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 96°C 25° TIME (sec) 1 Power Dissipation. R ( °C/W JA P(pk ( Duty Cycle 100 1000 FDD/FDU6644 Rev C(W) 30 100 ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ HiSeC™ DenseTrench™ ...

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