BUK854-800A Philips Semiconductors, BUK854-800A Datasheet - Page 6

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BUK854-800A

Manufacturer Part Number
BUK854-800A
Description
Insulated Gate Bipolar Transistor IGBT
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
MECHANICAL DATA
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
2. Refer to mounting instructions for TO220 envelopes.
3. Epoxy meets UL94 V0 at 1/8".
October 1994
Insulated Gate Bipolar Transistor (IGBT)
Dimensions in mm
Net Mass: 2 g
damage to MOS gate oxide.
not tinned
3,0 max
max
(2x)
1,3
Fig.19. TO220AB; pin 2 connected to mounting base.
1 2 3
2,54 2,54
10,3
max
3,7
6
3,0
2,8
0,9 max (3x)
13,5
min
1,3
4,5
max
Product Specification
BUK854-800A
min
5,9
2,4
0,6
Rev.1.100
15,8
max

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