BUK854-800A Philips Semiconductors, BUK854-800A Datasheet - Page 4

• Manufacturer Part Number: BUK854-800A
• Description: Insulated Gate Bipolar Transistor IGBT
• Manufacturer: Philips Semiconductors

Philips Semiconductors
October 1994
Insulated Gate Bipolar Transistor (IGBT)
Fig.8. Typical turn-on gate-charge characteristics.
Fig.7. Typical transconductance, T
V
conditions: I
16
14
12
10
GE
8
6
4
2
0
500
400
300
200
100
8
7
6
5
4
3
2
1
0
Fig.9. Typical Switching Times vs. T
0
= f(Q
VGE / V
0
0
gfe / S
g
0
t / ns
fe
td(off)
G
= f(I
5
); conditions: I
20
tf
C
C
); conditions: V
= 6 A; V
40
10
10
60
QG / nC
IC / A
15
Tj / C
CL
C
80
= 500 V; R
= 6 A; V
20
100
20
CE
BUK8Y4-800A
BUK8Y4-800A
= 15 V
BUK8Y4-800A
120
CE
25
G
j
= 500 V
= 25 ˚C .
= 25
140
30
j
30
4
Fig.10. Typical capacitances, C
conditions: I
conditions: I
1000
C = f(V
100
10
Fig.12. Typical Switching losses vs. T
12
10
Fig.11. Typical turn-off dV
0.7
0.6
0.5
0.4
0.3
0.2
0.1
8
6
4
2
0
0
0
C / pF
1
0
E / mJ
CE
E(on)
E(off)
); conditions: V
20
10
C
C
= 6 A; V
= 6 A; V
40
10
20
60
Rg / Ohm
VDS / V
CL
Tj / C
CL
= 500 V; T
80
GE
= 500 V; R
30
= 0 V; f = 1MHz.
100
100
Product Specification
BUK854-800A
CE
BUK8Y4-800A
BUK8Y4-800A
/dt vs. R
ies
120
BUK854-800A
, C
j
40
G
= 125 ˚C
oes
= 25
140
1000
Cies
Coes
Cres
, C
Rev.1.100
G
j
res
.