BUK854-800A Philips Semiconductors, BUK854-800A Datasheet

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BUK854-800A

Manufacturer Part Number
BUK854-800A
Description
Insulated Gate Bipolar Transistor IGBT
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
GENERAL DESCRIPTION
Fast-switching N-channel insulated
gate bipolar power transistor in a
plastic envelope.
The device is intended for use in
motor control, DC/DC and AC/DC
converters, and in general purpose
high frequency switching
applications.
PINNING - TO220AB
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCES
October 1994
Insulated Gate Bipolar Transistor (IGBT)
SYMBOL
V
V
I
I
I
I
P
T
T
SYMBOL
R
R
C
C
CLM
CM
PIN
V
stg
j
tab
CE
CGR
tot
th j-mb
th j-a
1
2
3
GE
gate
collector
emitter
collector
DESCRIPTION
PARAMETER
Collector-emitter voltage
Collector-gate voltage
Gate-emitter voltage
Collector current (DC)
Collector current (DC)
Collector Current (Clamped
Inductive Load)
Collector current (pulsed peak value, T
on-state)
Total power dissipation
Storage temperature
Junction Temperature
PARAMETER
Junction to mounting base
Junction to ambient
QUICK REFERENCE DATA
PIN CONFIGURATION
SYMBOL
V
I
P
V
E
C
CE
tot
CEsat
off
tab
CONDITIONS
-
R
-
T
T
T
V
T
-
-
CONDITIONS
In free air
-
mb
mb
j
j
mb
PARAMETER
Collector-emitter voltage
Collector current (DC)
Total power dissipation
Collector-emitter on-state voltage
Turn-off Energy Loss
CL
GE
= 25 ˚C
= 100 ˚C
= 25 ˚C
1 2 3
T
T
1
= 20 k
jmax.
jmax.
500 V
TYP.
MIN.
- 55
SYMBOL
60
-5
-
-
-
-
-
-
-
-
-
g
MAX.
MAX.
Product Specification
1.47
800
800
150
150
30
12
20
30
85
6
BUK854-800A
-
MAX.
800
3.5
0.5
12
85
c
e
Rev.1.100
UNIT
UNIT
K/W
K/W
W
˚C
˚C
V
V
V
A
A
A
A
UNIT
mJ
W
V
A
V

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BUK854-800A Summary of contents

Page 1

... CONDITIONS - ˚ 100 ˚ jmax. V 500 jmax ˚ CONDITIONS - In free air 1 Product Specification BUK854-800A MAX. UNIT 800 3.5 V 0.5 mJ SYMBOL MIN. MAX. UNIT -5 800 V - 800 ...

Page 2

... Inductive Load Energy Losses include all ’tail’ losses 500 125˚C; j Inductive Load Energy Losses include all ’tail’ losses 2 Product Specification BUK854-800A MIN. TYP. MAX. UNIT 800 - - 5 100 0.1 ...

Page 3

... Fig.4. Typical output characteristics 100 120 140 Fig.5. Typical on-state characteristics = f BUK854-800 800 1000 Fig.6. Typical transfer characteristics = Product Specification BUK854-800A BUK8Y4-800A VGE / VCE / =f(V ); parameter BUK8Y4-800A VGE / 150 0 0 ...

Page 4

... f(V CE BUK8Y4-800A 500 V conditions BUK8Y4-800A 100 120 140 Fig.12. Typical Switching losses vs conditions Product Specification BUK854-800A BUK854-800A VDS / ies oes ); conditions 1MHz BUK8Y4-800A 100 Rg / Ohm Fig ...

Page 5

... Fig.17. Typical Energy loss at turn-off vs conditions 125˚ VCC = VCL 90% 10% V D.U.T. 90% IC measure 10% 0V 0R1 Fig.18. Inductive Load Switching Times definition s. 5 Product Specification BUK854-800A E(off BUK8Y4-800A 2 1 100 Rg / Ohm = 500 125 ˚ BUK8Y4-800A E(off ...

Page 6

... Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for TO220 envelopes. 3. Epoxy meets UL94 V0 at 1/8". October 1994 10,3 max 3,7 2,8 3,0 13,5 min 1 0,9 max (3x) 2,54 2,54 Fig.19. TO220AB; pin 2 connected to mounting base. 6 Product Specification BUK854-800A 4,5 max 1,3 5,9 min 15,8 max 0,6 2,4 Rev.1.100 ...

Page 7

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1994 7 Product Specification BUK854-800A Rev.1.100 ...

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