BUK854-800A Philips Semiconductors, BUK854-800A Datasheet - Page 5

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BUK854-800A

Manufacturer Part Number
BUK854-800A
Description
Insulated Gate Bipolar Transistor IGBT
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
October 1994
Insulated Gate Bipolar Transistor (IGBT)
Fig.15. Test circuit for inductive load switching times .
conditions: V
conditions: I
VGE
10000
t p
1000
Fig.13. Typical Switching Times vs. R
500
400
300
200
100
Fig.14. Typical Switching Times vs. I
100
10
0
: adjust for correct Ic
0
1
t / ns
t / ns
CL
C
= 6 A; V
= 500 V; R
R
G
10
5
Rg / Ohm
CL
IC / A
Lc
= 500 V; T
G
= 25 ; T
IC measure
100
10
VCC = VCL
D.U.T.
0R1
BUK8Y4-800A
BUK8Y4-800A
j
= 125 ˚C
j
td(off)
td(off)
= 125˚C
tf
tf
1000
15
C
G
0V
5
90%
10%
90%
10%
Fig.18. Inductive Load Switching Times definition s.
V
conditions: V
I
Fig.16. Typical Energy loss at turn-off vs. R
Fig.17. Typical Energy loss at turn-off vs. I
conditions: I
1.5
0.5
1.5
0.5
0
2
1
0
2
1
1
0
E(off) / mJ
E(off) / mJ
td(on)
tr
CL
C
= 6 A; V
= 500 V; R
5
parameter V
10
VGE
Rg / Ohm
IC / A
CL
10
IC
= 500 V; T
G
= 25 ; T
VCL / V = 500
CL
100
Product Specification
BUK854-800A
td(off)
BUK8Y4-800A
BUK8Y4-800A
15
tc
400
300
j
= 125 ˚C
j
= 125˚C;
1000
Rev.1.100
20
VCE
tf
C
G
t
t

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