BUK854-800A Philips Semiconductors, BUK854-800A Datasheet - Page 3

• Manufacturer Part Number: BUK854-800A
• Description: Insulated Gate Bipolar Transistor IGBT
• Manufacturer: Philips Semiconductors

Philips Semiconductors
October 1994
Insulated Gate Bipolar Transistor (IGBT)
1E+01
1E+00
1E-01
1E-02
1E-03
120
110
100
90
80
70
60
50
40
30
20
10
100
0
0.1
10
1E-07
Fig.2. Normalised power dissipation.
1
Fig.1. Transient thermal impedance
Fig.3. Turn-off Safe Operating Area
0
PD%
Zth j-mb / (K/W)
0
D =
IC / A
conditions: T
0.05
0.02
Z
0.5
0.2
0.1
PD% = 100.P
th j-mb
0
20
200
1E-05
= f(t) ; parameter D = t
40
ICLM
400
j
60
VCE / V
D
Tmb / C
T
1E-03
/P
t / s
jmax.
D 25˚C
80
Normalised Power Derating
P
600
D
; R
= f(T
100
G
t
p
T
BUK854-800
= 50
1E-01
800
mb
D =
120
p
/T
)
t
T
p
t
1000
140
1E+01
3
Fig.4. Typical output characteristics, T
I
C
=f(V
Fig.5. Typical on-state characteristics
30
20
10
30
20
10
30
20
10
Fig.6. Typical transfer characteristics
0
0
0
GE
0
0
0
IC / A
IC / A
IC / A
) ; conditions: V
I
C
Tj / C = 25
I
=f(V
C
20
1
2
=f(V
150
5
CE
15
CE
); parameters T
4
2
); parameter V
VCEsat / V
VCE / V
VGE / V
10
VGE / V =
3
6
CE
=15 V; parameter T
Tj / C = 25
8
Product Specification
4
BUK854-800A
BUK8Y4-800A
BUK8Y4-800A
BUK8Y4-800A
15
VGE / V = 6
150
j,
GE
V
15
GE
10
5
j
=25 ˚C.
10
10
9
8
7
20
12
Rev.1.100
6
j