BUK456-60H Philips Semiconductors, BUK456-60H Datasheet - Page 3

• Manufacturer Part Number: BUK456-60H
• Description: PowerMOS transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
May 1993
PowerMOS transistor
ID% = 100 I
I
120
110
100
Fig.2. Normalised continuous drain current.
D
120
110
100
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
& I
0
Fig.3. Safe operating area. T
1000
Fig.1. Normalised power dissipation.
0
0
100
PD%
ID%
DM
10
1
1
= f(V
20
ID / A
PD% = 100 P
20
D
/I
D 25 ˚C
40
40
DS
); I
60
60
= f(T
DC
DM
10
single pulse; parameter t
80
80
Tmb / C
Tmb / C
mb
D
VDS / V
/P
); conditions: V
Normalised Current Derating
D 25 ˚C
100
100
Normalised Power Derating
100 us
10 ms
100 ms
120
120
tp = 10 us
1 ms
100
= f(T
BUK456-60H
mb
140
140
mb
= 25 ˚C
)
160
160
GS
180
180
10 V
p
3
Fig.5. Typical output characteristics, T
Fig.6. Typical on-state resistance, T
0.001
0.01
0.1
10
0.08
0.06
0.04
0.02
100
1
0.1
80
60
40
20
Fig.4. Transient thermal impedance.
0
0
Zth j-mb / (K/W)
D =
0.05
0.02
0
0
ID / A
RDS(ON) / Ohm
Z
0.5
0.2
0.1
20
15
R
0
th j-mb
I
DS(ON)
D
= f(V
1E-05
4.5
20
= f(t); parameter D = t
10
2
= f(I
DS
VGS / V = 15
5
8
); parameter V
D
40
4
); parameter V
VDS / V
5.5
1E-03
ID / A
t / s
P
D
60
6
6
Product Specification
t
p
BUK456-60H
T
VGS / V = 7.5
1E-01
BUK456-60H
6.5
10
BUK456-60H
GS
80
D =
8
GS
p
BUKx56-lv
/T
j
t
T
p
j
t
= 25 ˚C .
7
= 25 ˚C .
6.5
5.5
4.5
7
6
5
8
100
Rev 1.100
10
1E+01