BUK456-100B Philips Semiconductors, BUK456-100B Datasheet
BUK456-100B
Related parts for BUK456-100B
BUK456-100B Summary of contents
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... CONDITIONS MIN ˚ 100 ˚ ˚ ˚ CONDITIONS 1 Product specification BUK456-100A/B MAX. MAX. BUK456 -100A -100B 100 100 34 32 150 150 175 175 0.057 0.065 SYMBOL MAX. UNIT - 100 - 100 - 30 -100A -100B - 34 ...
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... ˚ 100 =125 ˚ BUK456-100A BUK456-100B D CONDITIONS MHz gen ...
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... 1E-05 1E-03 1E- Fig.4. Transient thermal impedance f(t); parameter j- BUK456-100A VGS / VDS / f(V ); parameter RDS(ON) / Ohm BUK456-100A 4.5 5 5.5 6 6.5 VGS / 7 f(I ); parameter V DS(ON 1E+ ˚ ˚ ...
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... BUK456-100A 1E-01 1E-02 1E-03 1E-04 1E-05 1E- ˚ 10000 1000 100 140 180 Fig.12. Typical capacitances f Product specification BUK456-100A/B VGS(TO max. typ. min. -60 - 100 Fig.10. Gate threshold voltage. = f(T ); conditions mA SUB-THRESHOLD CONDUCTION typ VGS / V Fig ...
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... Fig.13. Typical turn-on gate-charge characteristics f(Q ); conditions parameter April 1998 BUK456-100 Fig.14. Typical reverse diode current f Product specification BUK456-100A/B BUK456-100A 150 25 1 VSDS / V ); conditions parameter T SDS Rev 1.100 ...
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... Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT78 (TO220) envelopes. 3. Epoxy meets UL94 V0 at 1/8". April 1998 10,3 max 3,7 2,8 3,0 13,5 min 1 max (2x) 0,9 max (3x) 2,54 2,54 Fig.15. SOT78 (TO220AB); pin 2 connected to mounting base. 6 Product specification BUK456-100A/B 4,5 max 1,3 5,9 min 0,6 2,4 Rev 1.100 15,8 max ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1998 7 Product specification BUK456-100A/B Rev 1.100 ...