BUK456-60A Philips Semiconductors, BUK456-60A Datasheet

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BUK456-60A

Manufacturer Part Number
BUK456-60A
Description
PowerMOS transistor
Manufacturer
Philips Semiconductors
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUK456-60A
Manufacturer:
TOSHIBA
Quantity:
5 000
Philips Semiconductors
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic envelope.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and
in automotive and general purpose
switching applications.
PINNING - TO220AB
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCES
April 1993
PowerMOS transistor
SYMBOL
V
V
I
I
I
P
T
T
SYMBOL PARAMETER
R
R
D
D
DM
PIN
V
DS
DGR
tot
stg
j
tab
th j-mb
th j-a
1
2
3
GS
gate
drain
source
drain
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction Temperature
DESCRIPTION
QUICK REFERENCE DATA
PIN CONFIGURATION
SYMBOL
V
I
P
T
R
D
DS
tot
j
DS(ON)
CONDITIONS
CONDITIONS
-
R
-
T
T
T
T
-
-
mb
mb
mb
mb
GS
tab
= 25 ˚C
= 100 ˚C
= 25 ˚C
= 25 ˚C
= 20 k
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
1 2 3
1
MIN.
- 55
BUK456
-
-
-
-
-
-
-
-
SYMBOL
-60A
208
MIN.
52
36
-
-
MAX.
0.028
-60A
150
175
60
52
MAX.
g
150
175
175
60
60
30
Product Specification
TYP.
BUK456-60A/B
60
-
-60B
200
51
36
MAX.
-60B
0.03
d
150
175
s
60
51
MAX.
1.0
-
Rev 1.100
UNIT
UNIT
˚C
˚C
W
UNIT
V
V
V
A
A
A
˚C
K/W
K/W
W
V
A

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BUK456-60A Summary of contents

Page 1

... PIN CONFIGURATION tab CONDITIONS MIN ˚ 100 ˚ ˚ ˚ CONDITIONS 1 Product Specification BUK456-60A/B MAX. MAX. UNIT -60A -60B 150 150 175 175 0.028 0.03 SYMBOL MAX. UNIT - ...

Page 2

... Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad CONDITIONS - - -dI /dt = 100 Product Specification BUK456-60A/B MIN. TYP. MAX. UNIT 2.1 3.0 4 0.1 1 100 ...

Page 3

... Fig.5. Typical output characteristics BUK456-60 0.20 0. 100 us 0. 0.05 100 ms 0.00 100 = 25 ˚C Fig.6. Typical on-state resistance Product Specification BUK456-60A/B Zth j-mb / (K/W) BUKx56- 0.5 0.2 0.1 0.05 0. 1E-05 1E-03 1E- Fig.4. Transient thermal impedance f(t); parameter ...

Page 4

... 10000 1000 100 10 100 140 180 Fig.12. Typical capacitances f Product Specification BUK456-60A/B VGS(TO max. typ. min. - 100 140 Fig.10. Gate threshold voltage. = f(T ); conditions mA SUB-THRESHOLD CONDUCTION 2 % typ ...

Page 5

... Fig.13. Typical turn-on gate-charge characteristics f(Q ); conditions parameter April 1993 BUK456- 100 Fig.14. Typical reverse diode current f SDS 5 Product Specification BUK456-60A/B BUK456-50A 150 VSDS / V ); conditions parameter T GS Rev 1.100 2 j ...

Page 6

... Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for TO220 envelopes. 3. Epoxy meets UL94 V0 at 1/8". April 1993 10,3 max 3,7 2,8 3,0 13,5 min 1 0,9 max (3x) 2,54 2,54 Fig.15. TO220AB; pin 2 connected to mounting base. 6 Product Specification BUK456-60A/B 4,5 max 1,3 5,9 min 15,8 max 0,6 2,4 Rev 1.100 ...

Page 7

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1993 7 Product Specification BUK456-60A/B Rev 1.100 ...

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