BUK456-800A Philips Semiconductors, BUK456-800A Datasheet

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BUK456-800A

Manufacturer Part Number
BUK456-800A
Description
PowerMOS transistor
Manufacturer
Philips Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUK456-800A
Manufacturer:
IR
Quantity:
20 000
Part Number:
BUK456-800A/B
Manufacturer:
NXP
Quantity:
12 500
Philips Semiconductors
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic envelope.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and
in general purpose switching
applications.
PINNING - TO220AB
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCES
May 1995
PowerMOS transistor
SYMBOL
V
V
I
I
I
P
T
T
SYMBOL PARAMETER
R
R
D
D
DM
PIN
V
DS
DGR
tot
stg
j
tab
th j-mb
th j-a
1
2
3
GS
gate
drain
source
drain
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction Temperature
DESCRIPTION
QUICK REFERENCE DATA
PIN CONFIGURATION
SYMBOL
V
I
P
R
D
DS
tot
DS(ON)
CONDITIONS
CONDITIONS
-
R
-
T
T
T
T
-
-
mb
mb
mb
mb
GS
tab
= 25 ˚C
= 100 ˚C
= 25 ˚C
= 25 ˚C
= 20 k
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state
resistance
1 2 3
1
MIN.
- 55
BUK456
-
-
-
-
-
-
-
-
SYMBOL
-800A
MIN.
4.0
2.5
16
-
-
-800A
MAX.
800
125
MAX.
4
3
g
800
800
125
150
150
BUK456-800A/B
30
Product Specification
TYP.
60
-
-800B
3.5
2.2
14
-800B
MAX.
d
800
125
s
3.5
4
MAX.
1.0
-
Rev 1.200
UNIT
UNIT
˚C
˚C
W
UNIT
V
V
V
A
A
A
K/W
K/W
W
V
A

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BUK456-800A Summary of contents

Page 1

... PIN CONFIGURATION tab CONDITIONS MIN ˚ 100 ˚ ˚ ˚ CONDITIONS 1 Product Specification BUK456-800A/B MAX. MAX. UNIT -800A -800B 800 800 4 3.5 125 125 3 4 SYMBOL MAX. UNIT - 800 V - 800 -800A ...

Page 2

... Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad CONDITIONS - - 4.0 A; -dI /dt = 100 100 Product Specification BUK456-800A/B MIN. TYP. MAX. UNIT 800 - - V 2.1 3.0 4 0.1 1 100 ...

Page 3

... Fig.5. Typical output characteristics BUK456-800A 100 100 ms 0 1000 = 25 ˚C Fig.6. Typical on-state resistance Product Specification BUK456-800A/B Zth j-mb / (K/W) BUKx56- 0.5 0.2 0.1 0.05 0. 1E-05 1E-03 1E- Fig.4. Transient thermal impedance. ...

Page 4

... f 10000 1000 100 10 80 100 120 140 Fig.12. Typical capacitances f Product Specification BUK456-800A/B VGS(TO max. typ. min. -40 - 100 120 140 Fig.10. Gate threshold voltage. = f(T ); conditions mA ...

Page 5

... Fig.13. Typical turn-on gate-charge characteristics f(Q ); conditions parameter May 1995 BUK4y6-800 150 640 Fig.14. Typical reverse diode current f SDS 5 Product Specification BUK456-800A/B BUK4y6-800A 25 1 VSDS / V ); conditions parameter T GS Rev 1.200 2 j ...

Page 6

... Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for TO220 envelopes. 3. Epoxy meets UL94 V0 at 1/8". May 1995 10,3 max 3,7 2,8 3,0 13,5 min 1 0,9 max (3x) 2,54 2,54 Fig.15. TO220AB; pin 2 connected to mounting base. 6 Product Specification BUK456-800A/B 4,5 max 1,3 5,9 min 15,8 max 0,6 2,4 Rev 1.200 ...

Page 7

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. May 1995 7 Product Specification BUK456-800A/B Rev 1.200 ...

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