BUK456-1000 Philips Semiconductors, BUK456-1000 Datasheet
BUK456-1000
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BUK456-1000 Summary of contents
Page 1
... Total power dissipation tot R Drain-source on-state DS(ON) resistance PIN CONFIGURATION tab CONDITIONS MIN ˚ 100 ˚ ˚ ˚ CONDITIONS 1 Product Specification BUK456-1000B MAX. UNIT 1000 3.1 125 5 SYMBOL MAX. UNIT - 1000 V - 1000 3 2 125 W 150 ˚ ...
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... Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad CONDITIONS - - 3.5 A; -dI /dt = 100 100 Product Specification BUK456-1000B MIN. TYP. MAX. UNIT 1000 - - V 2.1 3.0 4 0.1 1 100 ...
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... 1E-05 1E-03 1E- Fig.4. Transient thermal impedance f(t); parameter j- BUK456-1000A VGS / VDS / f(V ); parameter RDS(ON) / Ohm BUK456-1000A 4.2 4.4 4.6 4.8 VGS / ˚ f(I ); parameter V DS(ON 1E+01 5 4.8 4.6 4.4 4 ˚ Rev 1.200 ...
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... f 10000 1000 100 10 80 100 120 140 Fig.12. Typical capacitances f Product Specification BUK456-1000B VGS(TO max. typ. min. -40 - 100 120 140 Fig.10. Gate threshold voltage. = f(T ); conditions mA ...
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... Fig.13. Typical turn-on gate-charge characteristics f(Q ); conditions 3.5 A; parameter May 1995 BUK456-1000 VDS / V =200 8 800 Fig.14. Typical reverse diode current f Product Specification BUK456-1000B BUK456-1000A 150 VSDS / V ); conditions parameter T SDS GS Rev 1.200 2 j ...
Page 6
... Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for TO220 envelopes. 3. Epoxy meets UL94 V0 at 1/8". May 1995 10,3 max 3,7 2,8 3,0 13,5 min 1 0,9 max (3x) 2,54 2,54 Fig.15. TO220AB; pin 2 connected to mounting base. 6 Product Specification BUK456-1000B 4,5 max 1,3 5,9 min 15,8 max 0,6 2,4 Rev 1.200 ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. May 1995 7 Product Specification BUK456-1000B Rev 1.200 ...